Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 139 (Apr. 2008), p. 113-118
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Motivated by the possibility of scaling down of various electronic devices at the nanolevel,we have chosen a simple p-n junction like device in silicon structure. An aggregation ofseventy-eight silicon atoms, passivated by oxygen is considered. We compute the electronicstructure of such a cluster and then the density of states and the optical spectra for this aggregate arecompared with a modified one. The modification is introduced by substituting phosphorus andboron atom within this cluster of silicon atoms in both sides in order to make a p-n junction likesituation. A variant of this p-n junction like structure is introduced by adding a layer of oxygenbetween the phosphorus and boron regions. Comparison of the electronic structures of all thesesystems reveals several interesting properties
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.139.113.pdf
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