ISSN:
1432-0630
Keywords:
68.55+b
;
72.20Fr
;
73.40.Lq
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Single-interface modulation-doped AlGaAs-GaAs heterostructures have very high mobilities if thick undoped spacers are introduced between the Si donors and the twodimensional electron gas. Electron densities are limited to values below 1012 cm−2. Higher channel densities are desirable for device applications and can be obtained by confining the electrons in quantum wells doped from both sides. Single quantum-well structures have been grown with sheet carrier densities exceeding 3×1012 cm−2 at 300 K and 77 K mobilities of 54,000 cm2/Vs. Single quantum wells doped from one side only with low electron concentrations of 2×1011 cm−2 have 4.2 K mobilities of 200,000cm2/Vs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617498
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