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  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced Electron Transfer from Triplet Fullerene, 3C60, to Tetracyanoethylene. Fourier Transform Electron Paramagnetic Resonance Study (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 7444-7447 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100082a008
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  • 2
    Electronic Resource
    Electronic Resource
    Band offsets and electronic structure of SiC/SiO2 interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3108-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide. The top of the SiC valence band is located 6 eV below the oxide conduction band edge in all the investigated polytypes, while the conduction band offset at the interface depends on the band gap of the particular SiC polytype. In the energy range up to 1.5 eV above the top of the SiC valence band, interface states were found. Their electron spectrum is similar to that of sp2-bonded carbon clusters in diamond-like a-C:H films suggesting the presence of elemental carbon at the SiC/SiO2 interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361254
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  • 3
    Electronic Resource
    Electronic Resource
    Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4178-4186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture and emission of electrons at single, individual interface traps is studied in sub-μm metal–oxide–semiconductor field-effect transistors (MOSFETs) by the random telegraph signals (RTSs) they induce by source-drain conductance modulations. The magnitude of the RTSs observed frequently exceeds 10% of the channel conductance and it exhibits a large scatter over two orders of magnitude. Analytical estimates and computer modeling show that the magnitude of the RTSs and the scatter cannot occur for a uniform MOSFET channel. It is concluded that fixed oxide and interface charge centers, which are present in the active device area at a high concentration, cause a percolating current distribution in the channel. The lucky trap centers located close to current paths give rise to large RTSs. The scatter in the magnitude of the RTSs is due to the random location of traps in the percolation pattern. Trapping centers causing RTSs thus act as atomic probes of the nonuniform current distribution in the channel. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361785
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  • 4
    Electronic Resource
    Electronic Resource
    Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2970-2979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capture and emission time constants are measured for a set of individual interface traps in different metal-oxide-semiconductor field-effect transistors (MOSFETs) by random telegraph signals. The data are evaluated to extract the Coulomb energy induced by the transfer of a single electron into an interface trap. A unified Coulomb energy of the order of several hundred millivolts independent of trap-specific properties is found, which is proportional to temperature and decays logarithmically with inversion carrier density in the MOSFET channel. The Coulomb energy found is in quantitative agreement with the theoretical modeling. The Coulomb effect is large compared to the trap lowering by the electric field and to the residual entropy change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356194
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamics of star polymers in a good solvent: A Kramers potential treatment (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4452-4460 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The "effective'' relaxation time τ of isolated star polymers with excluded volume interactions in the Rouse model limit (i.e., disregarding hydrodynamic interactions present in real solvents) is studied varying both the number of arms f and the number of monomers per arm l. Here τ is defined from the response of the gyration radius of the star polymer to a Kramers potential that describes the effect of shear flow in lowest order in the shear rate. Monte Carlo simulations are performed with two different techniques (simple sampling with enrichment or dynamic Monte Carlo, respectively) for two different models (simple self-avoiding walks with an extended core or the bond fluctuation model, respectively). It is proposed that the ratio τ(f,l)/τ(1,l) should be a universal function of f for large l, and the Monte Carlo data are used to test this hypothesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467429
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  • 6
    Electronic Resource
    Electronic Resource
    Energy spread and ion current measurements of several ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3739-3745 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Energy spread and extracted current measurements are presented for five different types of ion sources: hot cathode, cold cathode, magnetron, microwave, and electron cyclotron resonance (ECR). The measurements were performed with a 45° parallel-plate energy analyzer with a resolution of better than 0.5 eV at 500 eV incident energy. Energy spreads ranged from 0.5 to 4 eV, while total extracted beam currents ranged from 2 to 30 μA. Beam currents due specifically to protons, 3He++ ions, and H+2 ions are also presented. The ECR and magnetron sources gave the best overall performance. These, along with the energy analyzer, are currently being used in experiments to study ion-atom collision physics. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144500
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning x-ray microscopy using a laser-plasma source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1478-1482 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Previously high-resolution soft x-ray microscopy has only been possible with synchrotron sources. Here, the first successful attempts at using a scanning transmission x-ray microscope with a laser-plasma source are reported. Spatial resolutions were limited to about 650 nm by electrical noise in the detector, but single shot per pixel images were obtained of test and real specimens. The microscope was not optimized to the source since it was designed for use on the undulator beam line of a synchrotron. With an improved system, it is demonstrated that single shot per pixel imaging at high resolution (better than 50 nm) will routinely be possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144067
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  • 8
    Electronic Resource
    Electronic Resource
    Coulomb energy of traps in semiconductor space-charge regions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2649-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large Coulomb barriers exceeding ΔE≈250 meV are estimated for capture and emission rates of trap centers in semiconductor space-charge regions. Depending on the charge state of the trap, the capture rate or both the capture and emission rates are activated or deactivated, respectively. The Coulomb energy raises the equilibrium energy state of a trap center that is repulsively charged when occupied. Quantitative agreement of the calculated Coulomb energy is obtained with trapping rates for single individual interface traps in metal-oxide-semiconductor (MOS) structures measured by random telegraph signals. The Coulomb barrier is reduced in MOS capacitors by partial screening due to mobile charge carriers in the inversion channel. The Coulomb energy can be externally controlled in MOS structures by the gate bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354656
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  • 9
    Electronic Resource
    Electronic Resource
    Spatial coherence measurements and x-ray holographic imaging using a laser-generated plasma x-ray source in the water window spectral region (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8081-8087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of a coherent x-ray point source in the water window spectral region generated using a small commercially available KrF laser system focused onto a Mylar (essentially carbon) target have been measured. By operating the source in a low-pressure (approximately 20 Torr) nitrogen environment, the degree of monochromaticity was improved due to the nitrogen acting as an x-ray filter and relatively enhancing the radiation at a wavelength of 3.37 nm (C vi 1s-2p). X-ray pinhole camera images show a minimum source size of 12 μm. A Young's double slit coherence measurement gave fringe visibilities of approximately 62% for a slit separation of 10.5 μm at a distance of 31.7 cm from the source. To demonstrate the viability of the laser plasma as a source for coherent imaging applications a Gabor (in-line) hologram of two carbon fibers, of different sizes, was produced. The exposure time and the repetition rate was 2 min and 10 Hz, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353924
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  • 10
    Electronic Resource
    Electronic Resource
    Electron energy loss spectroscopy (EELS) of CH3NH2 adsorbed on Ni(100), Ni(111), Cr(100), and Cr(111) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 6001-6008 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Adsorbed CH3NH2 has been studied on Ni(100), Ni(111), Cr(100), and Cr(111) at 300 K using electron energy loss spectroscopy. The vibrational spectra indicate that molecular CH3NH2 exists on all four surfaces with bonding through the nitrogen lone pair, although a substantial amount of dissociation also occurs on the chromium surfaces. Approximately one monolayer of surface species is the stable coverage on each surface at 300 K. The possible existence of coadsorbed dissociation products CHx and NHx is discussed. The CN stretch is anomalously broad on Ni (100) and Ni(111) but not detectably broadened on Cr(100), indicating a strong sensitivity of this bond to interactions with the Ni surfaces. A multiplicity of sites is indicated on Cr(111) by the breadth of all the peaks. The loss spectra exhibit striking intensity differences, which can be attributed partly to impact scattering and partly to intrinsic differences in the interaction of CH3NH2 with the different surfaces. A model explaining the linewidth and intensity differences is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449634
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