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  • 1
    Electronic Resource
    Electronic Resource
    Charge exchange of N2+2 with Ar (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 5673-5676 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The charge exchange of N2+2 is distinguished from charge exchange of N+ in the measurement of the differential cross section. N2+2 charge exchanges with argon to produce predominantly Ar+ in its ground state and N+2 in its C 2Σ+u and D 2Π states. A vibrational progression is observed corresponding to the vibrational frequency in the C state. Also observed is the charge exchange of N+2(A 2Πu). A simple model is used to explain the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449641
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrahigh resolution spectroscopy of C2−: The A 2Πu state characterized by deperturbation methods (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 1723-1731 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spectra of the C2− B 2Σu+–X 2Σg+ transition have been obtained using a merged laser-ion beam spectrometer with sub-Doppler resolution. Strong perturbations of the B state by the previously unobserved A 2Πu state are analyzed to obtain the characteristics of the new state. The A state spectroscopic constants in wave numbers (with estimated standard errors) are found to be Te=4060±180, ωe=1656±20, ωexe=10.80±0.50, Be=1.630±0.005, and A=−24±1. All nine perturbations observed in this work and the five observed in the work of Herzberg and Lagerqvist are explained by the interaction of the A 2Πu state with the B state. These results, as well as the perturbation matrix elements, are compared with theoretical estimates and results for isoelectronic 13-electron species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448960
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  • 3
    Electronic Resource
    Electronic Resource
    Electron-impact dissociation of H3O+ (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3386-3394 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fragment cross sections for electron impact dissociation of H3O+ into OH+ and O+, and for dissociation of D3O+ into D2O+ have been measured in a crossed beam appartus for electron energies from threshold to 1000 eV. The cross sections for O+ and OH+ rise abruptly at threshold indicating that the mechanism for dissociation is via production of an electronically excited state of H3O+ and direct dissociation into O+ and OH+. At high energy the cross section has a falloff σ∝ln(E)/E expected in the Bethe-Born approximation. At 200 eV electron energy the cross sections for fragments are: D2O+, σ=6.7±1.8×10−17 cm2; OH+, σ=3.0±0.6×10−17 cm2; O+, σ=7.9±1.6×10−18 cm2. The observed threshold energies for OH+ and O+ production are 14±3 and 19±3 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450960
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  • 4
    Electronic Resource
    Electronic Resource
    Two-step barrier diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 960-962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission probabilities and current densities of a two-step barrier heterostructure are calculated within the effective-mass approximation as a function of electron energy and applied bias. This system shows negative differential resistance under forward bias, because of a quasibound state in a triangular well, and no resonance under reverse bias, in the current density. The two-step barrier diode may show negative resistance in an ac field in the absence of a dc bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99241
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of resonant tunneling paths in current–voltage characteristics line shapes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with different spacer layers, within the framework of a Poisson solver together with a coherent tunneling approximation for transmission probabilities. We show that varying the spacer layer thickness, together with barrier heights, changes dramatically the current density-voltage characteristics line shape, which is revealed to be an important qualitative signature of the tunneling paths involved in the double-barrier diodes under operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114289
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  • 6
    Electronic Resource
    Electronic Resource
    Indented barrier resonant tunneling rectifiers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4174-4176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article concerns a novel negative-conductance device consisting of a series of N laterally indented barriers which exhibits resonant tunneling under one bias polarity and simple tunneling under the opposite one, thus acting as a rectifier. Electrons undergo resonant tunneling when the bias creates a band profile with N triangular wells which can each contain a resonant state. From 1 to N the addition of each indentation can be used to increase the current density and the rectification ratio, calculated at the current-peak bias at resonance, provided that at a given bias all the states in the triangular wells align each other with the emitter Fermi energy in order to form a resonance along the structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363290
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  • 7
    Electronic Resource
    Electronic Resource
    Optical probing of interface roughness in resonant tunneling structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 810-812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on photoluminescence (PL) and photoluminescence-excitation measurements in GaAs/In0.1Ga0.9As/AlAs double-barrier tunneling structures as a function of bias voltage and temperature. We have observed a splitting in the quantum well photoluminescence due to island formation in the quantum well. We have a good correlation between the variation of integrated PL intensity, linewidth, and tunnel current bias for both lines. The temperature dependence of photoluminescence spectra shows that transfer of carrier between islands can be tuned by the applied bias and that states in different islands are populated by electrons in the resonant tunneling process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365776
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  • 8
    Electronic Resource
    Electronic Resource
    Multiphoton Dissociation of Polyatomic Molecules (1979)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 30 (1979), S. 379-409 
    Details
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pc.30.100179.002115
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