Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 1323-1330
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Experimental studies and numerical analysis have been carried out to clarify the relationship between carrier diffusion lengths and defect density in undoped a-Si:H. It has been confirmed that in device quality plasma-deposited a-Si:H, the diffusion lengths of both electrons and holes under steady-state illumination of the intensity equivalent to normal solar cell operating conditions are determined by the density of Si dangling-bond defects ranging between 3×1015 and 8×1016 cm−3. This rather trivial result, however, has not been obtained in previous studies in which the carrier transport data obtained by the steady-state photocarrier grating method were treated incorrectly. The ratio of the drift mobility of electrons to that of holes and the ratio of electron lifetime to the hole lifetime in a-Si:H under illumination have been determined and their implications discussed. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363888
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