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  • 1
    Electronic Resource
    Electronic Resource
    GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2532-2534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-speed, 80-μm-diam, GaAs/Alx Ga1−x As p-i-n photodiodes having frequency response in excess of 7 GHz and internal quantum efficiency approaching 100% were fabricated by low-pressure metalorganic chemical vapor deposition (MOCVD) using both tertiarybutylarsine (TBA) and arsine. These are the highest performance MOCVD GaAs devices achieved with nonarsine sources and comparable to the best reported p-i-n photodiodes of similar size. Net carrier concentration of the undoped TBA GaAs was determined by capacitance-voltage analysis to be less than 5×1014 cm−3 . Photoluminescence measurements indicate that undoped TBA-grown Alx Ga1−x As (x=0.25) is also of excellent quality (FWHM=12 meV). Growth conditions leading to optimized devices were found to be similar for the two sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101973
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Tunable repetition rate optical spectroscopy with high-power visible diode lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2123-2127 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The methodology and apparatus are described to perform tunable repetition rate optical spectroscopic measurements using high-power visible diode lasers. Here, a train of picosecond pulses interrogates a material, a sample, or a device under test. The response of the sample or device varies as the pulse repetition frequency changes. Using an rf modulated high-power AlGaInP 670-nm diode laser, the pulse train repetition frequency may be smoothly varied from the kHz range up to the GHz range. The power and the pulse width may be kept constant by adjusting the rf power and the dc injection current. This procedure is automated through computer control. Here we describe the details of our particular setup and present examples of the technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143947
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and Raman scattering investigations of implanted and thermally annealed InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1979-1981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Raman scattering experiments were carried out on Si-implanted and thermally annealed semi-insulating InP. The application of PL measurements to determine concentrations of free electrons at the surfaces of implanted samples is demonstrated. The carrier concentrations are estimated from the measured widths of the PL line shapes. These estimates are compared with electron concentrations obtained from the Raman scattering measurements of the coupled modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336005
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion coefficients and activation energies for Zn diffusion into undoped and S-doped InP (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2031-2033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of open tube Zn diffusion into undoped and S-doped n-type InP over the temperature range 550–675 °C. The process yields reproducible results which are consistent with an interstitial-substitutional diffusion model. For the undoped samples, an activation energy of 1.52 eV and a diffusion constant of 4.9×10−2 cm2/s are obtained. For heavily S-doped samples, values of 2.34 eV and 1.4×103 cm2/s, respectively, result. The difference in activation energy which is comparable to the Fermi level difference in the two substrate types is consistent with the different diffusion mechanisms which occur in these two types of InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98981
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    High-power, very low threshold, GaInP/AlGaInP visible diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100 μs pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104845
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  • 6
    Electronic Resource
    Electronic Resource
    Beam quality of high-power broad-area visible diode lasers (1994)
    Springer
    Optical and quantum electronics 26 (1994), S. 911-928 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We characterize the beam quality of visible-wavelength GRIN-SCH-SQW lasers in terms of geometry and driving current. A second-moment-based, free beam measurement of M 2 yields values ranging from near unity on the plane parallel to the junction, to near 10 in the perpendicular plane. The M 2 values exhibit a dependence on the shape of the L-I characteristic. Higher-order moments are uso quantitatively describe the changes in beam shape as a function of current, and a correlation between the kurtosis and M 2 is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00340558
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Sustained oscillations in GaInP/AlGalnP visible diode lasers (1995)
    Springer
    Optical and quantum electronics 27 (1995), S. 101-116 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We report the observation of sustained oscillations and pulsation behaviour in various GaInP/AlGaInP 670 nm diode lasers. We present experimental dependences of the oscillation strength and frequency as functions of diode structure, temperature and drive current. We explore the resonant excitation of this oscillation using both an r.f. current signal and a tunable-repetition-rate picosecond laser source. When a diode laser with a weak internal oscillation is coupled to an external cavity, strong pulsing behaviour is observed, and we attribute this behaviour to self-mode-locking.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00367945
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    Paper (German National Licenses)
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