Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 55 (1994), S. 1309-1313 
    ISSN: 0022-3697
    Keywords: A. electronic materials ; A. inorganic compounds ; A. optical materials ; D. electronic structure ; D. optical properties
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The structure and properties of cubic spinel nitrides were investigated based on first-principles theoretical calculations. The lattice constants, bulk moduli, band structures, electronic bonding, and lattice stability of thirty-nine single and double nitrides were studied. The single spinel nitrides of the form c-A3N4 (where A is a Group IVA element), except c-Hf3N4, are all semiconductors with band gaps ranging from an indirect gap of 0.07 eV in c-Ti3N4 to a direct gap of 3.45 eV in c-Si3N4. For double nitrides of the form c-AB2N4 (where A and B are Group IVA (Ti, Zr, Hf) or IVB (C, Si, Ge, Sn) elements), both metallic and insulating band structures are possible. The stability of the double spinel nitrides, relative to single nitrides, is dependent on the optimal cation radii and polyhedral volumes at the tetrahedral A sites and the octahedral B sites. Of the thirty-two double nitrides, only nine are predicted to be energetically favorable. Among the potentially stable phases, the most interesting ones are c-CSi2N4 (which has an exceptionally strong covalent bonding and large bulk modulus), c-SiGe2N4 (which has an energetically favorable direct band gap of 1.85 eV), and c-SiTi2N4 (which is metallic).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3809-3811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ab initio calculation of the XANSE/ELNES spectra for α quartz and stishovite were carried out using a large-supercell approach that includes the electron–core–hole interaction. Excellent agreements with experimental spectra were obtained for Si–K, Si–L2,3, and O–K edges. The usual interpretation using orbital-resolved local density of states in the conduction band is unsatisfactory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The α- and β-SiAlONs are ceramic solid solutions with charge-neutral substitutions in α- and β-Si3N4. They have high potential for applications as structural materials. We have calculated the electronic structure and bonding of β-Si6—zAlzOzN8—z for z= 0, 1, 2, 3, 4 using a first-principles method. Total energy calculations show that the bulk modulus of β-Si6—zAlzOzN8—z decreases as z increases, in general agreement with experimental trends. Simultaneous substitution of the (Si,N) pair by (Al,O) results in impurity-like states in the upper portion of the bandgap of β-Si3N4. As z increases, more and more states are introduced into the gap, forming a new conduction band (CB) edge for SiAlON. At z= 4, the calculated bandgap is ∼1.3 eV. Density of states (DOS) calculations show the top of the valence band remains steep for all z, and the bottom of the CB is formed predominately by Si—O antibonding states. Orbitally resolved partial DOS calculations in the CB region are used to predict the trends of the electron-energy-loss near-edge spectra (ELNES) of Si-L2,3, Al-L2,3, Si-K, Al-K, O-K, and N-K edges in β-SiAlON. The impurity-like states near the CB edge result in pre-edge structures in all ELNES spectra. Effective charge and bond order calculations show that the overall bond strength in β-SiAlON decreases only slightly as z increases. Although the stronger Si—N bonds are replaced by weaker Al—O bonds, the remaining Si—N and Al—O bonds actually strengthen as z increases because of the effective charge redistribution after substitution. This is a very interesting finding that may partly explain the superior mechanical properties of the SiAlON system that render them suitable for structural applications.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: γ-Al2O3 is a defective spinel phase of alumina with cation site vacancies randomly distributed. Its structure and properties are not well understood. There has been long-standing controversy as to whether the cation vacancies are located at the tetrahedral sites or the octahedral sites. Based on an empirical pair potential calculation and first-principles electronic structure studies, we have concluded that cation vacancies are preferentially located at the octahedral sites in bulk γ-Al2O3. Our calculation shows that the electronic structure of γ-Al2O3 differs from that of α-Al2O3 in fine details. γ-Al2O3 has a smaller band gap and wider valence bandwidths. The calculated density of states (DOS) of γ-Al2O3 is in good agreement with recent experimental XPS and XES data. Site- and orbital-resolved partial DOS (PDOS) of Al atoms shows significant dependence on the local coordinations. The PDOS of an oxygen adjacent to a vacancy differs substantially from that of a fully coordinated anion.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Using a recently developed first-principles supercell method that includes the electron and core-hole interaction, the XANES/ELNES spectra of Si-L2,3, Si-K, and N-K edges in α-Si3N4, β-Si3N4, spinel c-Si3N4, and Si2N2O were calculated and compared. The difference in total energies between the initial ground state and the final core-hole state provides the transition energy. The calculated spectra are found to be in good agreement with the experimental measurements on β-Si3N4 and c-Si3N4. The differences in the XANES/ELNES spectra for the same element in different crystals are explained in terms of differences in local bonding. The use of orbital-decomposed local density of states to explain the measured spectra is shown to be inadequate. These results reaffirm the importance of including the core-hole effect in any XANES/ELNES spectral calculation.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...