Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Supersonic Vibrations set up in a Zinc Bar undergoing Transverse Vibrations (1933)
    [s.l.] : Nature Publishing Group
    Nature 131 (1933), S. 803-804 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN the course of experiments on the latent splitting of bars as reported by one of us1, we noticed a very curious and interesting phenomenon in zinc. When the zinc bar after observations of frequency had been removed, we noticed on examining it that besides rupture lines, a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/131803c0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Intellectual development of deaf children in different educational environments
    Amsterdam : Elsevier
    Journal of Communication Disorders 6 (1973), S. 29-36 
    Details
    ISSN: 0021-9924
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine , Psychology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0021-9924(73)90022-1
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Group status and attitude change in desegregated classrooms
    Amsterdam : Elsevier
    International Journal of Intercultural Relations 3 (1979), S. 137-152 
    Details
    ISSN: 0147-1767
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Education , Psychology , Sociology , Economics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0147-1767(79)90059-2
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Nature of interfaces and oxidation processes in Ge+-implanted Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4028-4032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the nature of the interfaces between silicon dioxide and germanium-rich layer (SiO2/GexSi1−x) in Ge+-ion implanted and oxidized Si (100) samples. A series of implants were used to study the interfacial roughness as a function of implant dose. Oxidations were carried out at temperatures both above and below the viscous flow point of silicon dioxide (SiO2). In each case, the SiO2/GexSi1−x interface was found to be sharper on an atomic scale compared to the oxide/silicon (SiO2/Si) interface in virgin Si formed after similar oxidation treatments. An enhancement in oxidation was found for the implanted samples over the virgin silicon samples. This enhancement was greater for oxidation carried out at 900 °C for 30 min compared to that at 1000 °C for 20 min. At the higher implant doses, predominantly 60° misfit dislocations were observed at the GexSi1−x/Si interface. The mechanism of oxidation leading to these phenomena is discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343325
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Strain relief mechanisms and the nature of dislocations in GaAs/Si heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2376-2380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and glide of misfit dislocations in the GaAs/Si system has been investigated using transmission electron microscopy. GaAs epilayers of different thicknesses were examined by electron microscopy (plan and cross section) and the elastic strain remaining in the film has been related to the average spacing of the misfit dislocations at the interface. The 1000-A(ring)-thick GaAs epilayer contains mostly 60° misfit dislocations with an average spacing larger than the equilibrium dislocation spacing, which implies that the misfit strain is not fully relieved. The 2000-A(ring) and thicker GaAs epilayers contain predominantly 90° misfit dislocations with an average spacing between the dislocations less than the equilibrium dislocation spacing. The formation of sessile 90° dislocations at the interface is explained on the basis of a reaction of two 60° dislocations. A model is developed based on minimum energy considerations to determine the strain-versus-thickness relationship. The theoretical predictions of strain relaxation are compared with experimental observations using high-resolution electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344270
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Growth of ceramic thin films on Si(100) using an in situ laser deposition technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8358-8362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of MgO and yttria-stabilized ZrO2(YSZ) thin films on Si(100) substrates using laser (wavelength 248 nm pulse duration 40 ns, and repetition rate 5 Hz) physical vapor deposition method. The films were deposited from solid targets of MgO and polycrystalline YSZ in appropriate ambient with the substrate temperature optimized at 650 °C. The absorption coefficient in the MgO target was enhanced by Ni doping. The films were characterized using scanning and transmission electron microscopy (plan and cross section), x-ray diffraction, and Rutherford-backscattering spectrometry. The films were found to be polycrystalline with a texture. The thin films of MgO exhibited 〈111〉 texture, while the YSZ films contained both 〈111〉 and 〈200〉 textures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347398
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    In situ single-chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria-stabilized zirconia buffered (100)GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−δ(YBCO) thin films have been deposited in situ on GaAs(100) by laser evaporation using yttria-stabilized zirconia (YSZ) as a buffer layer. The YSZ buffer layer was deposited at room temperature initially, followed by a deposition at 650 °C. The YBCO layers were deposited subsequently at substrate temperature of 650 °C. All the depositions were carried out in a single chamber equipped with a multitarget holder using KrF excimer laser, λ=248 nm. The morphology and structure of the buffer layer and YBCO films were determined using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Auger spectroscopy. The nature of YSZ films was determined to be polycrystalline with partial texturing. The YBCO superconducting thin films on these YSZ-coated GaAs specimens exhibited strong (00l) orientation with peak intensities similar to those observed on single-crystal YSZ substrates. The superconducting transition temperature Tc (onset) of 92 K and Tc0(zero resistance) of 73 K were achieved for YBCO thin films on GaAs with YSZ buffer layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105594
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    In situ single chamber laser processing of YBa2Cu3O7−δ superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1578-1580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ pulsed excimer laser processing of high Tc YBa2Cu3O7−δ films on Si (100) substrates with yttria-stabilized zirconia (YSZ) buffer layers, has been carried out for the first time using a multitarget deposition system. Both YSZ and YBa2Cu3O7−δ layers were deposited sequentially using a KrF excimer laser (λ=248 nm) at substrate temperature of 650 °C. The morphology and structure of the buffer layers and YBa2Cu3O7−δ films were determined using x-ray diffraction and transmission electron microscopy techniques. The superconducting transition temperature Tc (onset) of 90 K and Tc0 (zero resistance) of 82 K were achieved for YBa2Cu3O7−δ thin films on Si with YSZ buffer layers. An interesting result of this study was that good quality, highly textured YBa2Cu3O7−δ films with the c axis perpendicular to the substrate could be grown on single crystal as well as polycrystalline textured YSZ layers deposited on silicon substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103358
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Role of thyroid in tissue respiration of birds
    Amsterdam : Elsevier
    General and Comparative Endocrinology 49 (1983), S. 333-343 
    Details
    ISSN: 0016-6480
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0016-6480(83)90197-1
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Self-esteem, locus of control and children's perception of classroom social climate: A developmental perspective
    Amsterdam : Elsevier
    Contemporary Educational Psychology 4 (1979), S. 154-161 
    Details
    ISSN: 0361-476X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Education , Psychology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0361-476X(79)90070-5
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...