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  • 1
    Electronic Resource
    Electronic Resource
    Interface effects on YBa2Cu3O7−δ ultrathin film growth monitored by in situ resistance measurement (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3175-3177 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth dynamics of pulsed laser deposited ultrathin YBa2Cu3O7−δ films on various substrates was explored using an in situ resistance measurement technique. The results indicate that an interface region exists before the onset of uniform growth. On MgO and YSZ substrates, the first 30–50 A(ring) has a small contribution to the conductivity of the film. This interface layer is less than one unit cell thick on better lattice-matched substrates, such as SrTiO3, LaAlO3, and CeO2. The thinnest interface layer was found on PrBa2Cu3O7−δ . Misfit strain relaxation and island growth mechanism can be used to explain experimental observations. The superconductivity degradation for ultrathin YBa2Cu3O7−δ films is also discussed. In situ resistance measurement can be an excellent method to study the ultrathin film growth mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111330
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  • 2
    Electronic Resource
    Electronic Resource
    Crystalline phases of II-VI compound semiconductors grown by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2162-2164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on (111) and (100) InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality (fully in-plane aligned) and mirror-like surface morphology. It was found that, on (111)-oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to the surface, while ZnS and ZnSe films were in the cubic phase. The films grown on (100)-oriented substrates were all cubic. These high quality films should be useful in optoelectronics applications. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112749
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  • 3
    Electronic Resource
    Electronic Resource
    Highly sensitive photodetector using porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 459-461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630–900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107884
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  • 4
    Electronic Resource
    Electronic Resource
    Two coupled parabolic wells under an electric field (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4006-4014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunability of the states of two coupled parabolic quantum wells subjected to an electric field is studied by using the transfer-matrix approach. Two numerical procedures are used. Both involve subdividing the potential profile into a number of linear or step partitions. For the linear partition approach, the Airy function solution of the Schrödinger equation is employed while for the step approach, the plane-wave solution is used. Both methods give identical results if small enough partition intervals are used. It is found that the plane-wave method is easier and that it simplifies the programming without seriously sacrificing the calculational speed. The coupled well width, the barrier width, and the applied field were changed systematically to study the changes in the energy levels, wave functions, and transmission of a resonant tunneling diode based on the double parabolic structure. The anticrossing between the energy levels on changing the well width or the bias of the coupled wells is seen and discussed. It is also found that the transmission peak is sharp and deep if the resonance occurs in both of the coupled wells at the same energy, while it is smaller and broader if the resonance occurs in only one well because the wave function is blocked by the other nonresonant well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354444
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  • 5
    Electronic Resource
    Electronic Resource
    Increased epidermal growth factor receptor in multidrug-resistant human neuroblastoma cells (1988)
    New York, N.Y. : Wiley-Blackwell
    Journal of Cellular Biochemistry 38 (1988), S. 87-97 
    Details
    ISSN: 0730-2312
    Keywords: EGF receptor ; multidrug-resistance ; human neuroblastoma ; binding assay ; immunoprecipitation ; transformation/differentiation ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Multidrug-resistant human neuroblastoma cell lines obtained by selection with vincristine or actinomycin D from two independent clonal lines, SH-SY5Y and MCIXC, have 3- to 30-fold more cell surface epidermal growth factor (EGF) receptors than the drug-sensitive parental cells as indicated by EGF binding assays and immunoprecipitation, affinity-labeling, and phosphorylation studies. Reversion to drug sensitivity in one line was accompanied by a return to the parental level of EGF receptor. SH-EP cells, a clone derived from the same neuroblastoma cell line as SH-SY5Y but which displays melanocyte rather than neuronal lineage markers, also express significantly more EGF receptor than SH-SY5Y cells. By nucleic acid hybridization analysis with a molecularly cloned probe, increased receptor level in multidrug-resistant cells was shown to be the result of higher levels of EGF receptor mRNA in drug-resistant than in drug-sensitive cells. The increased steady state amount of specific RNA did not result from amplification of receptor-encoding genes. A small difference was observed in the electrophoretic mobility under denaturing conditions of EGF receptor immunoprecipitated from drug-resistant and drug-sensitive cells. Quantitative and qualitative modulation of the EGF receptor might reflect alterations in the transformation and/or differentiation phenotype of the resistant cells or might result from unknown selective pressures associated with the development of multidrug resistance.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jcb.240380203
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