Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 5275-5276
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated the thermal decomposition of native oxide on Si(100) under ultrahigh vacuum using high-resolution x-ray photoelectron spectroscopy (XPS). The native oxide was formed by wet chemical treatment (HCl/H2O2/H2O), a widely employed procedure for preparing atomically clean surfaces. XPS measurements revealed that high temperature heating ((approximately-greater-than)700 °C) leads to a remarkable alteration in Si 2p and O 1s spectra. After heating to 700 °C, the Si3+ structure increases and the O 1s full-width-at-half-maximum decreases. After heating to 800 °C, the Si4+ and O 1s intensity decreases but the Si2+ intensity remains almost unchanged. We suggest that the formation of volatile SiO is related to the Si3+ structure produced by high temperature annealing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354271
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