ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In our early analytic reports [1,2] has been made the supposition that during the diffusionwelding (DW) in subcontact area of SiC is formed the intermediate amorphous layer. In the presentwork are given the first results of transmission electron microscopy (TEM) and electron diffractioninvestigations of subcontact layers in n0-n- 4H-SiC. TEM examinations show that the boundarybetween aluminium and silicon carbide looks like stripy interface layer of ~ 25 nm thickness. Thisis the evidence that during diffusion welding in subcontact surface layer of SiC the shear microdeformations have been taking place and due to this process the plane inclusions of small-grainedphase have been appeared. The image of contact area obtained in diffracted SiC rays (dark field)apparently confirms that stripy zone belongs to silicon carbide because the aluminium (black zone)fell out of contrast. Diffraction picture obtained from bulk zone of silicon carbide looks likemonocrystallin, but the micro diffraction pattern obtained from the subcontact (stripy zone) gives alot of concentric rings, that makes evidential the fact of existence of small-grained inclusions.Deciphering of this electron-diffraction pattern reveals the presence of such elements as residueSiC, Al, Si, as well as inclusions of graphite
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.647.pdf
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