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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and Photophysics of the Optical Probe N1-Methyl-7-azatryptophan (1995)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 11850-11853 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00153a005
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic resonance of intrinsic defects in the spin-Peierls magnet CuGeO3 (1998)
    Springer
    Journal of experimental and theoretical physics 87 (1998), S. 1019-1030 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Magnetic resonance in pure single-crystal CuGeO3 at frequencies 9–75 GHz in the temperature range 1.2–25 K is investigated. Splitting of the magnetic-resonance line into several spectral components is observed at temperatures below 5 K, where spin-Peierls dimerization suppresses the magnetic susceptibility and the ESR signal intensity. Analysis of the magnetic resonance spectra over a wide frequency range with different directions of the magnetic field at different temperatures makes it possible to identify among these components the ESR signals due to defects, having effective spin S=1/2 and spin S=1, in the spin-Peierls phase. The g factor corresponding to these ESR signals is the same and close to the value characteristic for the ion Cu2+. Another magnetic-resonance line is characterized by a strongly anisotropic g factor and an increase (at a threshold in the excitation power) in the susceptibility both at resonance and in the line wings. These signals are tentatively attributed to two possible types of planar defects arising on the walls of domains of the spin-Peierls state with different values of the dimerization phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558730
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  • 3
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of porous gallium arsenide (2000)
    Springer
    Semiconductors 34 (2000), S. 732-736 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Photoluminescence (PL), Raman scattering, and carrier transport have been studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type crystalline GaAs (faces A and B). Peaks of the main PL band from faces A and B were observed at 1.82 and 1.88 eV, respectively. The electron drift mobility was found to be ∼4×10−4 cm2 V−1 s−1. The nanocrystallite size in porous GaAs was determined both from PL spectra and from the Raman shift. The obtained values are close or equal to 6–8 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188063
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  • 4
    Electronic Resource
    Electronic Resource
    Weak 2D hole localization on the (0001)Te surface under hydrostatic pressure (1997)
    Springer
    Physics of the solid state 39 (1997), S. 495-498 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Effect of hydrostatic pressure on the anomalous magnetoresistance (AMR) of the two-dimensional (2D) hole layer on (0001) surface of Te has been studied. Application of hydrostatic pressure was found to reverse the sign of AMR of the 2D hole system from positive to negative. The results are interpreted in terms of weak localization theory for noninteracting particles, modified by taking into account the specific features of tellurium valence-band energy spectrum, namely, lifted spin degeneracy, many-valley nature, and trigonal spectrum distortion on the (0001) plane. The pressure dependences of the characteristic relaxation times representing the parameters of the theory have been found. It is shown that hydrostatic pressure symmetrizes the 2D hole spectrum at the (0001)Te surface, which manifests itself, in particular, in a reduced trigonal distortion of the spectrum. The pressure dependence of the spin-orbit splitting between the midpoint of the gap separating the two uppermost valence subbands and the lowest, spin-degenerate subband, Δ1(P), has been determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129875
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  • 5
    Electronic Resource
    Electronic Resource
    Manifestation of glass-crack fractal geometry in Raman spectra (1999)
    Springer
    Physics of the solid state 41 (1999), S. 938-941 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A Raman spectroscopic investigation of the fractal structure on the surface of cracks of different size scales in glassy SiO2 is reported. A study was made of the crack surface and of the distorted layer formed after grinding and polishing and comminution. The parameters of the fractal structure thus found reflect the properties of the material and the crack nature; namely, fractal dimension is of greater importance for more compact materials, and the geometric size of fractal units (i.e., the size in real space) correlates with crack dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130909
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  • 6
    Electronic Resource
    Electronic Resource
    Deformation of LiF crystals in DC magnetic field (2000)
    Springer
    Physics of the solid state 42 (2000), S. 277-279 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Active deformation of LiF crystals in a dc magnetic field B is shown to produce strong plasticization, which is the more pronounced, the higher is the magnetic induction B and the lower the strain rate $$\dot \varepsilon $$ . The measured dependences of the yield point σ y on B and $$\dot \varepsilon $$ find a reasonable explanation within a simple kinetic model based on the competition between the thermally activated and magnetically stimulated unpinning of dislocations from impurity centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131197
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetoelectric response of the spin-Peierls compound CuGeO3 (1996)
    Springer
    JETP letters 64 (1996), S. 695-701 
    Details
    ISSN: 1090-6487
    Keywords: 75.30.Cr ; 75.60.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The effect of an electric field on the magnetic susceptibility in a pure CuGeO3 single crystal at microwave frequencies is investigated. A quadratic effect of the electric field on the magnetic susceptibility, which increases with decreasing temperature, is observed in the spin-Peierls state at temperatures below 5 K. The observed effect is tentatively attributed to residual magnetism, due to distortions of the regular dimerized structure at domain walls with different values of the dimerization phase, and to the effect of the electric field on the interchain exchange interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567284
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm (1999)
    Springer
    Semiconductors 33 (1999), S. 1-5 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of rapid-anneal conditions and subsequent coimplantation of oxygen ions on the photoluminescence of erbium ions implanted with an energy of 1 MeV and dose of 5×1014 cm−2 in MOCVD-grown GaN films is investigated. The erbium photoluminescence intensity at a wavelength ∼ 1.54 µm increases as the fixed-time (15 s) anneal temperature is raised from 700 °C to 1300 °C. The erbium photoluminescence intensity can be increased by the coimplantation of oxygen ions at anneal temperatures in the indicated range below 900 °C. The transformation of the crystal structure of the samples as a result of erbium-ion implantation and subsequent anneals is investigated by Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187636
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic resonance in pure and diamagnetically diluted spin-Peierls CuGeO3 (1996)
    Springer
    JETP letters 64 (1996), S. 305-311 
    Details
    ISSN: 1090-6487
    Keywords: 76.50.+g ; 75.50.Kj ; 75.30.G
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Magnetic resonance at frequencies 22–75 GHz is investigated in pure single-crystalline CuGeO3 in the temperature range 1.2–25 K. At temperatures below 4 K the magnetic resonance line splits into four spectral components. The line close to the ESR of the paramagnetic phase is associated with impurities or defects. The other three lines have the same intensity in different samples and are apparently characteristic for pure single crystals at low temperature. An antiferromagnetic resonance with two resonance absorption branches and a spectrum characteristic for an antiferromagnet with easy, average, and hard anisotropy axes was observed and investigated in the Néel compound Cu0.98Zn0.02GeO3 with diamagnetic dilution of the spin subsystem.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567188
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  • 10
    Electronic Resource
    Electronic Resource
    On the effect of a magnetic field on the yield point and kinetics of macroplasticity in LiF crystals (1997)
    Springer
    JETP letters 65 (1997), S. 497-501 
    Details
    ISSN: 1090-6487
    Keywords: 62.20.Fe ; 75.90.+w
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A strong effect of a static magnetic field B on active deformation kinetics ( $$\dot \in $$ =const) in LiF crystals is observed. This is a threshold effect with respect to B and $$\dot \in $$ ; it is observed only for B〉 B c (B≃0.4 T) and $$\dot \in 〈 \dot \in _c (\dot \in _c \approx 10^{ - 4} s^{ - 1} )$$ . Magnetic sensitivity is exhibited by the yield stress τ y , which decreases by approximately a factor of 1.5 for B=0.48 T, and by the stage-II and stage-III hardening coefficients θII and θ III, the former decreasing and the latter increasing in a magnetic field. A physical interpretation is proposed for the observed behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567378
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