ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Photoluminescence (PL), Raman scattering, and carrier transport have been studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type crystalline GaAs (faces A and B). Peaks of the main PL band from faces A and B were observed at 1.82 and 1.88 eV, respectively. The electron drift mobility was found to be ∼4×10−4 cm2 V−1 s−1. The nanocrystallite size in porous GaAs was determined both from PL spectra and from the Raman shift. The obtained values are close or equal to 6–8 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188063
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