ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The results of an investigation of the donor centers in Czochralski-grown silicon ion-implanted with rare-earth impurities of Dy, Ho, Er, and Yb are presented. The formation of three groups of dominant donors with ionization energies less than 0.2 eV in silicon after annealing at 700 and 900 °C is discussed. The shallow donors at ≈E c −40 meV are interpreted as thermal donors containing oxygen and intrinsic defects. The two other groups of donor states are identified as centers containing rare-earth ions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187737
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