ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A new chemical mechanical polishing process (ACMP) has been developed by the PennState University Electro-Optics Center for producing damage free surfaces on silicon carbidesubstrates. This process is applicable to the silicon face of semi-insulating, conductive, 4H, 6H, onaxisand off-axis substrates. The process has been optimized to eliminate polishing inducedselectivity and to obtain material removal rates in excess of 150nm/hour. The wafer surfaces andresultant subsurface damage generated by the process were evaluated by white lightinterferometery, Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), andepitaxial layer growth. Residual surface damage induced by the polishing process that propagatesinto the epitaxial layer has been significantly reduced. Total dislocation densities measured on theACMP processed wafers are on the order of the densities reported for the best as grown siliconcarbide crystals [1]. Characterization of high electron mobility transistors (HEMTs) grown on thesesubstrates indicates that the electrical performance of the substrates met or exceeded currentrequirements [2]
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1091.pdf
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