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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2492-2504 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical formulas accounting for the excitation and deexcitation processes of the alternating current-driven thin-film electroluminescent devices have been obtained, which include both the impact excitation and the energy-transfer mechanisms. The empirical equations for the conduction current duration time and the luminescent decay time related to the tunneling emission of electrons at the interface, the capture of holes in traps, and the light emission of luminescent centers lead to the analytical formulas for the transferred charge ΔQ, the luminance L, and other quantities of physical interest as a function of the electric field. The estimates for ΔQ and L in ZnS:Mn and ZnS:TbF3 devices have been made on the basis of Wolff's distribution function and found to be in good agreement with the experimental data. From the estimated results, it is found that the energy-transfer mechanism depends on various material parameters and drive conditions, and that it plays a role in improvement of the luminance in the low-electric-field region. In the high-electric-field region of interest, the energy transfer from Cu-related sensitizers to luminescent centers in ZnS:Mn and ZnS:TbF3 devices yields an increase of luminance by a factor of about 1.5 and 3, respectively.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4092-4094 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Te codoping in ZnS:CeF3 thin-film electroluminescent devices are reported. ZnS1−xTex:CeF3 thin films are prepared at several Te concentrations and substrate temperatures. The emissive peak position and intensity depend on Te concentrations, substrate temperatures, the annealing, and drive voltages.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4877-4883 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:TbOF and ZnS:TmOF active layers for thin-film electroluminescent devices were deposited in oxygen atmosphere by an electron-beam evaporation method and the effects of oxygen in active layers on electroluminescent (EL) characteristics were studied. With increasing oxygen deposition pressures, the luminance and the luminescent decay time increased and the threshold voltage shifted to lower values in ZnS:TbOF devices, while they showed no notable variations in ZnS:TmOF devices. X-ray-diffraction studies for ZnS thin-films showed that by the deposition in oxygen atmosphere the film orientation of (111) plane, the film uniformity, and the grain size are improved. By an analysis based on the Auger electron spectroscopy spectra for ZnS thin films and EL emission spectra, it was confirmed that a small amount of oxygen is incorporated into films and suppresses the recombination related to zinc and sulfur vacancies. It was found that contrary to ZnS:TmOF devices, ZnS:TbOF devices show a change in the peak intensity of EL spectra by oxygen doping. From the experimental results, it is suggested that in ZnS:TbOF devices oxygen doping could give rise to the increase of the luminance due to a suppression of the nonradiative energy transfer via grain boundaries and/or vacancies, whereas in ZnS:TmOF devices it plays no role in such a mechanism. The effect of oxygen doping on interfaces is also discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 983-985 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to improve the primary color purity of the plasma display panel (PDP), inorganic (SiO2)1−x(Nd2O3)x alloy films have been fabricated by the rf-magnetron sputtering method, and their optical properties have been investigated as functions of Nd2O3 contents in films and thickness of films. The study has revealed that absorption in (SiO2)1−x(Nd2O3)x films is due to intratransition within the 4f shell of the Nd3+ ion, and that it becomes larger with increasing Nd3+ ion concentrations in films and film thickness. In the PDP devices with our band rejection color filters, luminances from neon gas discharge itself and sidebands of phosphors are sufficiently reduced, resulting in wider color gamut and higher color purity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 991-993 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Li codoping in ZnS:TmF3 thin-film electroluminescent devices are reported. ZnS:Tm, Li thin films are prepared at several Li concentrations and substrate temperatures. The electroluminescent characteristics of ZnS:Tm,Li devices depend on Li concentrations, substrate temperatures, the annealing, and drive voltages.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2242-2244 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of oxygen co-doping in ZnS:TmF3 and ZnS:Tm, Li thin-film electroluminescent devices are reported. Active layers are deposited in oxygen atmosphere at substrate temperatures of 200 and 300 °C. It is found that by oxygen codoping the luminance of ZnS:TmF3 and ZnS:Tm, Li devices increases, and that this phenomenon becomes marked in the films prepared at a higher substrate temperature.
    Type of Medium: Electronic Resource
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