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  • 1
    Electronic Resource
    Electronic Resource
    Electro-optical switching in a GaAs multiple quantum well directional coupler (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2509-2511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical and experimental results are reported on electro-optical switching in a GaAs-based multiple quantum well coupled planar nonlinear optical directional coupler. It is shown that a careful selection of the wavelength of operation can lead to an efficient, practically constant loss, low electric field controlled transfer of light energy from one slab waveguide to the other. The quantum-confined Stark effect in the multiple quantum well coupling layer is employed as the switching mechanism. Results are compared with those achieved with nonlinear all-optical switching in the same structure. It is believed that this is the first semiconductor ΔK switch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101077
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  • 2
    Electronic Resource
    Electronic Resource
    Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7398-7400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new tunable source of the far-infrared radiation based on intersubband electronic Raman scattering in semiconductor quantum wells is proposed. The gain and threshold of the proposed Raman oscillator are estimated and compared with the intersubband laser. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360391
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  • 3
    Electronic Resource
    Electronic Resource
    Optical waveguiding in Si/Si1−xGex/Si heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3370-3372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguiding at 1.3 μm has been observed in a submicrometer strained layer of Si1−xGex sandwiched between a Si capping layer and a Si substrate. This structure is a precursor of the waveguided Si/Si1−xGex/Si heterojunction bipolar transistor. The buried alloy layer, grown by chemical vapor deposition, had a Ge content of either 8% or 18%. The SiGe layer was ∼1500 A(ring) thick beneath a 2-μm Si cap. The observed TE0 mode profile agreed with theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349276
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence from Si1−xGex strained layers grown by atmospheric pressure chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6201-6203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature photoluminescence due to the self-annihilation of bound excitons has been observed in Si1−xGex strained layers grown using atmospheric pressure chemical vapor deposition. Samples were grown at temperatures near 1000 °C with growth rates up to 1000 nm per minute allowing short growth times, thus preventing extensive interdiffusion at layer interfaces. Well-resolved, bulk-like photoluminescence spectra with narrow no phonon linewidths were observed from strained SiGe material indicating it to be of suitable electronic quality. For a sample consisting of 120 nm of Si0.92Ge0.08 capped with 90 nm of Si on a Si(100) substrate, the photoluminescence spectrum exhibited Si1−xGex bound exciton lines with resolved no phonon and transverse optic phonon components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350433
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  • 5
    Electronic Resource
    Electronic Resource
    Electro-optical and nonlinear optical coefficients of ordered group IV semiconductor alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 626-630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Miller's delta δ14(2ω) of 0.0172 m2/C is found for β-SiC at 1.1 μm from the measured Pockels coefficient r41 [Appl. Phys. Lett. 59, 1938 (1991)]. Assuming δ is constant, we estimate that r41 for zincblende SiC, GeC, SiGe, SiSn, GeSn, and SnC is in the range 2.7 to 11.3 pm/V. For these binary materials, the optical second-harmonic coefficient d14(2ω) is estimated to be 30 to 1160 pm/V. Similar coefficients are expected for the ordered alloys GeSiC, SnSiC, SiGeSn, SnGeC, and SiGeCSn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351844
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  • 6
    Electronic Resource
    Electronic Resource
    Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of population inversion is studied for the SiGe/Si system and compared with that of GaAs/AlGaAs. Because of the absence of strong polar optical phonon scattering in SiGe/Si, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, is consistently an order of magnitude larger than that of GaAs/AlGaAs; nor does it show the sudden drop to zero or negative values when the lasing energy exceeds the optical phonon energy. Both systems studied are superlattices, each period of which consists of three coupled quantum wells and barriers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113375
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  • 7
    Electronic Resource
    Electronic Resource
    Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1243-1245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure chemical vapor deposition techniques have been used to grow electronic quality Si-Ge epilayers on Si substrates. The degree of tetragonal strain in the layers has been determined using Raman spectroscopy. The relative energy shift of the Si-Si phonon line associated with the Si1−xGex epilayers from a pseudoalloy of the same composition was used as a quantitative measure of the strain. Layer growth was found to be almost commensurate with the Si substrates for thicknesses in the region of ∼100 nm. For x(approximately-equal-to)0.1 the resulting films were highly strained and homogeneous. The strain diminished with increasing thickness and it was estimated that a layer would be fully relaxed when the thickness exceeded 3000 nm. The phonon linewidths provided information on the epilayer and interface quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109784
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