ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Atomic structure and morphology of 6H-SiC(0001) and 3C-SiC(100) surfaces are studiedby scanning tunneling microscopy (STM), synchrotron radiation-based !-spot x-ray photoemissionspectroscopy (!-spot XPS) and low energy electron microscopy (LEEM). STM shows very highquality Si-rich 6H-SiC(0001) 3x3 surfaces with less than 2% of atomic defects. Si removal uponannealing leads to atomic crack defects formation with a novel 2"3x2"3-R30° reconstructioncoexisting with few 3x3 domains having no crack, suggesting important stress relief during the phasetransition. LEEM also shows cracks formation on cubic 3C-SiC(100) surfaces and gives insightsabout surface morphology with large faceting and mesa (!m) formation. These defect fracturesdeveloping upon Si removal are likely to be also generated during initial oxidation since the initialoxygen interaction tends to relieve surface strain on SiC in contrast to Si surfaces. These atomiccrack defects could be related to the interface electronic states recurrent at SiO2/SiC interfaces
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.481.pdf
Permalink