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  • 1
    Electronic Resource
    Electronic Resource
    Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1931-1937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the velocity of misfit dislocation threading segments in real time during ultrahigh vacuum (UHV) chemical vapor deposition heteroepitaxial growth of thin SiGe epilayers on Si (001) using ultrahigh vacuum transmission electron microscopy. We observe no measurable difference in dislocation velocities during growth and during post-growth annealing of samples with an atomically clean surface, in contrast to previous observations in the InGaAs/GaAs (001) system. However, dislocations are seen to move approximately three times slower during growth and post-growth UHV annealing than during annealing of samples which have a native oxide present on the surface. We have used post-growth depositions of arsenic and oxygen to investigate the effect of surface condition on dislocation velocities, and discuss possible causes for the increase in dislocation velocities in the presence of a native oxide. These systematic studies suggest a hitherto unappreciated interaction between moving dislocations and the surface in this system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366984
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  • 2
    Electronic Resource
    Electronic Resource
    Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1819-1821 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser lift-off of GaN heteroepitaxial layers from sapphire substrates is a promising method for electronic device integration and GaN substrate creation. Of critical importance is the structural and chemical quality of the GaN layers following laser processing. In this letter, transmission electron microscopy techniques are used to characterize the modifications that occur at the resulting GaN surfaces. Structural alteration and chemical intermixing following lift-off are confined to approximately the first 50 nm. These results indicate that laser lift-off is a viable route for GaN substrate creation, as well as for electronic device integration. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309030
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  • 3
    Electronic Resource
    Electronic Resource
    Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 335-337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments have shown that a native oxide layer on the surface of a strained SiGe epilayer causes an order of magnitude increase in dislocation velocities during annealing over those observed in atomically clean samples and during crystal growth [E. A. Stach, R. Hull, R. M. Tromp, M. C. Reuter, M. Copel, F. K. LeGoues, and J. C. Bean, J. Appl. Phys. 83, 1931 (1998)]. This behavior is explained herein by stress-assisted dislocation kink nucleation at the oxide/epilayer interface. Finite element models are used to estimate the stress local to steps at this interface due to both intrinsic and thermal expansion stresses, and dislocation theory is used to determine the resulting increase in single kink nucleation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384904
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  • 4
    Electronic Resource
    Electronic Resource
    An off-normal fibre-like texture in thin films on single-crystal substrates (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 426 (2003), S. 641-645 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In the context of materials science, texture describes the statistical distribution of grain orientations. It is an important characteristic of the microstructure of polycrystalline films, determining various electrical, magnetic and mechanical properties. Three types of texture component are ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02198
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