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  • 1
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films grown by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3526-3531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial, perovskite Pb(Mg1/3Nb2/3)O3–PbTiO3 films were grown by metalorganic chemical vapor deposition under various deposition conditions and characterized by x-ray diffraction and transmission electron microscopy. Pyrochlore free films were obtained under all deposition conditions used in this study. Magnesium-rich growth conditions lead to the formation of a Mg-rich impurity phase in the films, embedded as coherent lamellae parallel to the growth direction. Depending on the growth conditions, a wide variation in the stoichiometry and volume fraction of this impurity phase was found between samples, whereas morphology and crystal structure were found to be very similar. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372376
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  • 2
    Electronic Resource
    Electronic Resource
    Nanostructure and chemistry of a (100)MgO/(100)GaAs interface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube-on-cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM–energy dispersive x-ray and scanning TEM–electron energy loss spectroscopy analysis of the interlayer shows that it consists of the native oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112296
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  • 3
    Electronic Resource
    Electronic Resource
    Growth defects in GaN films on 6H–SiC substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2678-2680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice defects in GaN epilayers grown on 6H–SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3〈112¯0〉, [0001], and 1/3〈112¯3〉. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116279
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  • 4
    Electronic Resource
    Electronic Resource
    Structure and stability of La2O3/SiO2 layers on Si(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to investigate La2O3/SiO2/Si structures. The La2O3 layers were deposited on thermal SiO2 on silicon, followed by rapid thermal annealing treatments at 600 °C and 800 °C in a nitrogen ambient. After annealing at 600 °C, the oxide layers were amorphous. After an 800 °C treatment, crystallites appeared in the original La2O3 layer, and the total oxide layer thickness increased by 17%, most likely due to the oxygen diffusion and reaction at the Si/SiO2 interface. EELS, using a 0.2 nm probe, showed that rapid thermal annealing at 600 °C did not cause significant La diffusion into the SiO2 layer, whereas some intermixing was observed at 800 °C. We use the observed microstructures to estimate equivalent oxide thicknesses. The results demonstrate that oxygen partial pressures and initial SiO2 thickness need to be carefully controlled to control SiO2 formation at the Si interface and to achieve target equivalent oxide thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383268
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  • 5
    Electronic Resource
    Electronic Resource
    Oxidation states of titanium in bulk barium titanates and in (100) fiber-textured (BaxSr1−x)Ti1+yO3+z thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3149-3151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical shifts of titanium L edges and oxygen K edges in electron energy-loss spectroscopy in transmission electron microscopy were used to detect valence state reduction of Ti in bulk barium titanates, used as reference materials, and in (BaxSr1−x)Ti1+yO3+z (BST) thin films grown with excess Ti. A hollandite-type Ba titanate, containing Ti with an average valence state of approximately 3.7 in octahedral coordination, showed large chemical shifts relative to rutile TiO2 and BaTiO3, containing only Ti4+. In BST, chemical shifts relative to BaTiO3 were measured from grain interiors of columnar films with different amounts of excess Ti. We found that shifts, corresponding to an average valence state of Ti smaller than nominal 4+, increase with increasing amounts of excess Ti in the films. The results show that at least some amount of excess Ti is accommodated in these films by a defect mechanism that requires a reduction of the average valence state of Ti. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418036
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  • 6
    Electronic Resource
    Electronic Resource
    Quantitative High-Resolution Electron Microscopy of Interfaces (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 207-209 (Feb. 1996), p. 23-34 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.207-209.23.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Grain Boundary Structure and Composition in Strontium Titanate (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 207-209 (Feb. 1996), p. 421-424 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.207-209.421.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Respiratory failure and intensive care treatment in bone marrow-transplanted patients (1996)
    Springer
    Intensive care medicine 22 (1996), S. 269-270 
    Details
    ISSN: 1432-1238
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01712250
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  • 9
    Electronic Resource
    Electronic Resource
    Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties (2000)
    Springer
    Interface science 8 (2000), S. 209-221 
    Details
    ISSN: 1573-2746
    Keywords: barium strontium titanate ; electron energy-loss spectroscopy (EELS) ; metal oxide thin films ; dielectric properties
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper, we investigate the role of grain boundaries in polycrystalline (Ba x Sr1−x )Ti1+y O3+z films, grown by metal organic vapor deposition, in the accommodation of nonstoichiometry, as well as their role in the strong composition dependence of the electric and dielectric behavior observed in these films. High-spatial resolution electron energy-loss spectroscopy is used for the analysis of composition and structural changes at grain boundaries, as a function of film composition. The existence of amorphous, titanium rich, TiO2-like phases at the grain boundaries of films with large amounts of excess Ti (y ≥ 0.08) may explain the non-monotonic resistance degradation behavior of the films as a function of Ti content. However, we show that a grain boundary phase model fails to explain the strong composition dependence of the dielectric behavior. Electron energy-loss spectra indicate a distortion of the Ti–O octahedra in the grain interiors in samples with increasing Ti excess. The decrease of the dielectric constant with increasing amounts of excess Ti is therefore more likely due to Ti accommodation in the grain interiors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008794520909
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