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  • 1
    Electronic Resource
    Electronic Resource
    Fluorescence-probe study of oil-in-water microemulsions. 3. Further investigations involving other surfactants and oil mixtures (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 819-822 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150648a040
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 542-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347705
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  • 3
    Electronic Resource
    Electronic Resource
    Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 595-604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission of light and external coupling after the appropriate excitons have been formed in the organic light-emitting devices (OLEDs) has been investigated. The internally emitted light can be classified into three modes: externally emitted, substrate waveguided, and indium–tin–oxide (ITO)/organic waveguided. A combined classical and quantum mechanical microcavity model is used to calculate the distribution of light emission into these three modes in an OLED on planar substrates. The ITO/organic modes maybe suppressed due to the thinness of the ITO/organic layers. Consequently, as much as over 50% of the internally generated light is emitted externally in some structures, much greater than the ∼20% figure given by classical ray optics. This model is used to examine how this distribution varies with exciton to cathode distance, the thickness of the ITO layer, and the index of refraction of the substrate. It can also be applied to OLEDs on shaped substrates where an increase in the total external emission up to a factor of 2.3 has been demonstrated. The numerical results agree well with experimentally measured far-field intensity profiles, edge emissions, and increase in external emission due to shaped substrates. Finally, based on these results, we discuss different approaches to device optimization, depending on the fluorescence efficiency of the emitter and whether a shaped substrate is used. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425448
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of a partially oxidized calcium cathode on the performance of polymeric light emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1376-1382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the influence of the presence of oxygen during the deposition of the calcium cathode on the structure and on the performance of polymeric light emitting diodes (pLEDs). The oxygen background pressure during deposition of the calcium cathode of polymeric LEDs was varied. Subsequently, the oxygen depth distribution was measured and correlated with the performance of the pLEDs. The devices have been fabricated in a recently built ultraclean setup. The polymer layers of the pLEDs have been spincoated in a dry nitrogen atmosphere and transported directly into an ultrahigh vacuum chamber where the metal electrodes have been deposited by evaporation. We used indium–tin–oxide as anode, OC1C10 PPV as electroluminescent polymer, calcium as cathode, and aluminum as protecting layer. We achieved reproducibility of about 15% in current and brightness for devices fabricated in an oxygen atmosphere of (very-much-less-than)10−9 mbar. For further investigations the calcium deposition was carried out in an oxygen atmosphere from 10−8 to 10−5 mbar. We determined the amount of oxygen in the different layers of the current–voltage-light characterized pLEDs with elastic recoil detection analysis and correlated it with the characteristics of the devices. The external efficiency of the pLEDs decreases continuously with increasing oxygen pressure, the current shows a pronounced minimum. The brightness mostly decreases with increasing oxygen with an indication of a slight minimum. PLEDs with completely oxidized calcium are not operational. The first contact of the pLEDs with the dry glove box environment leads to an immediate reduction of current and brightness which is caused by the cooling of the devices by several degrees. Determining reproducible characteristics of pLEDs in the vacuum requires the measurement of their temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383577
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3043-3047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report chemical vapor deposition growth of SiGeC layers on 〈100〉 Si substrates. At the growth temperature of 550 °C, the C concentration as high as 2% can be incorporated into SiGe (Ge content ∼ 25%) to form single crystalline random alloys by using low flow of methylsilane (0.25 sccm) as a C precursor added in a dichlorosilane and germane mixture. For intermediate methylsilane flow (0.5 sccm – 1.5 sccm), the Fourier transform infrared spectroscopy (FTIR) absorption spectra indicate the growth of amorphous layers. For the layers with high flow of methylsilane (12 sccm), there are silicon-carbide-like peaks in the FTIR spectra, indicating silicon carbide precipitation. The films were also characterized by x-ray diffraction, high resolution transmission electron microscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy to confirm crystallinity and constituent fractions. The defect-free band-edge photoluminescence at both 30 K and 77 K was observed in Si/SiGeC/Si quantum wells, even at power densities as low as 0.5 W/ cm2 and 1 W/cm2, respectively. Deep photoluminescence around 0.8 eV and luminescence due to D3 dislocations at 0.94 eV were not observed under any excitation conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363163
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  • 6
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5160-5164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lowered-barrier-height silicide Schottky diodes are desirable for obtaining longer cutoff-wave- length Si-based infrared detectors. Silicide Schottky diodes have been fabricated by the reaction of evaporated Pt and Ir films on p-Si1−xGex alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. Internal photoemission measurements were made and the barrier heights were obtained from these. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights of ∼0.27 and ∼0.31 eV, respectively, higher than typical values of 0.22 and 0.12 eV for the corresponding silicide/p-Si diodes. Their emission constants are also lower and more voltage dependent than silicide/Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower barrier heights (∼0.15 eV) than the PtSi/Si barrier height. The barrier height shifts in such silicide/Si/SiGe diodes are interpreted by accounting for tunneling through the unconsumed Si layer. This is done analytically using a simple model based on the Cohen, Vilms, and Archer (unpublished) modification to the Fowler equation, and leads to an extracted barrier height, that is, the Si barrier height reduced by the Si/SiGe band offset.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355763
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  • 7
    Electronic Resource
    Electronic Resource
    Suppression of boron penetration by polycrystalline Si1−x−yGexCy in metal–oxide–semiconductor structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polycrystalline Si1−x−yGexCy layer grown by rapid thermal chemical vapor deposition has been used as a thin intermediate layer on top of the thin gate oxide in a metal–oxide–semiconductor structure with boron-doped polycrystalline silicon as the gate electrode. Although boron readily penetrated through the Si1−x−yGexCy and accumulated in it, boron penetration across the gate oxide into the substrate was greatly suppressed compared to that in structures without Si1−x−yGexCy layer. Our work suggests that the addition of carbon reduced the chemical potential of boron in polycrystalline Si1−x−yGexCy, compared to that in polycrystalline silicon or polycrystalline Si1−xGex. We have also observed no gate depletion effects with the use of poly-Si1−x−yGexCy layers in both p+ and n+ gate doping. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123020
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  • 8
    Electronic Resource
    Electronic Resource
    High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film transistors have been fabricated in polycrystalline silicon films on steel foil. The polycrystalline silicon films were formed by the crystallization of hydrogenated amorphous silicon, which had been deposited on 200-μm-thick foils of stainless steel coated with ∼0.5-μm-thick layers of SiO2. We employed crystallization temperatures (and duration) of 600 °C (6 h), 650 °C (1 h), and 700 °C (10 min). Top-gate transistors made from films crystallized at 650 °C have an average electron field-effect mobility of 64 cm2/V s, with equal values in the linear and saturated regimes. Thus steel substrates permit a substantial reduction in crystallization time over glass substrates, and afford polysilicon with high electron mobility. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124978
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  • 9
    Electronic Resource
    Electronic Resource
    Three-color organic light-emitting diodes patterned by masked dye diffusion (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1913-1915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of masked dye diffusion to locally pattern the emissive color of organic light-emitting devices (OLEDs) over a large area is introduced. By using a large-area diffusion source, which may be a spin-coated doped polymer film, the entire process of masked diffusion of dye into a polymer film of an OLED to create an integrated three-color device has been demonstrated at atmospheric pressure. The materials used to demonstrate this method are the polymer poly(9-vinylcarbazole) combined with electron transport molecules, and the dyes bimane, coumarin 6, and Nile red. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123711
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  • 10
    Electronic Resource
    Electronic Resource
    Ink-jet printing of doped polymers for organic light emitting devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 519-521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120807
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