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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5611-5615 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical vapor deposited 3C-SiC films were micromachined into free standing cantilevers and their anelastic and elastic properties were determined by a vibrating reed technique. Despite a high density of defects, epitaxial 3C-SiC exhibits extremely high mechanical Q which is essential for resonator sensors and actuators. An anelastic relaxation peak was found with an associated activation energy of 0.94 eV. Doping caused splitting of this peak. The mechanism of the mechanical relaxation peak is discussed in relation to defect movement under stress. Young's modulus of epitaxial undoped 3C-SiC was found to be 694 GPa, p-doping reduced it to 474 Gpa. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4567-4570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coefficient of thermal expansion of electrodeposited Ni/Cu multilayers was obtained by measuring the evolution of membrane resonances and hence the tension as a function of temperature. The apparent thermal expansion coefficient of the multilayer membranes increases as the interface density of the multilayers increases. This increase is analyzed in terms of stress relaxation resulting from sliding of nonperfectly bonded interfaces. The analysis permits the normalization of all thermal expansion data of the Cu/Ni multilayers with layer thicknesses ranging from 20 to 800 nm but not of the thinnest layers, 2 nm thick. The results are consistent with the idea that interfacial adhesion improves as the layer thickness becomes very small, favoring epitaxial growth.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1280-1283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal stresses in chemical-vapor-deposited 3C-SiC films were studied by a vibrating membrane technique. The differential thermal expansivity of 3C-SiC films was investigated by the change of the internal stress as a function of temperature. It was found that the internal stress of the films is dominated by thermal stresses and its magnitude depends both on doping and the film thickness. While p doping substantially increases the stress, increasing the film thickness reduces the stress of the SiC layer. The thermal expansivity of the SiC layer shows a lower value which is significantly less than that of bulk 3C-SiC and tends to approach the expansivity of the Si substrate. It is proposed that the stress dependence of the SiC films on doping and film thickness is the result of the film morphology which is heavily faulted for very thin films and more perfect as the film thickness increases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 9549-9560 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low energy electron diffraction technique was used to study the hydrogen chemisorption induced structural instability on the diamond C(111) surface. From the quantitative analysis of diffraction spots intensity on the as-dosed, partially desorbed, and annealed hydrogenated C(111) surfaces, the correlation between the (1×1)↔(2×1) phase transformation, hydrogen coverage, and surface temperature is shown. Thermal treatment with partial hydrogen desorption on the fully hydrogenated C(111) surface induces a (1×1)–(2×1) reconstruction with the observable half-order spots intensity (I1/2) emerging only after heating the substrate to 1270 K. Conversely, thermal annealing of the partially hydrogenated C(111) surface without desorbing H causes the size shrinking of the (2×1) domains as well as the relaxation of the hydrogenated domains. The temperature effect of I1/2 summarized from both thermal studies reveals that the (2×1) domain instability originated from the relaxation of the hydrogenated domains at elevated temperatures. In addition, the H chemisorption behavior on C(111) at different surface temperatures suggests that the terrace edges could be the preferential sites for the initial H adsorption and the growth of the hydrogenated domains might predominantly start from the terrace boundaries at a surface temperature as low as 125 K. The present study also allows us to tentatively propose that there might exist a low-temperature chemisorption state in addition to the hydrogenated metastable state as suggested by the sum-frequency generation spectroscopy and theoretical studies. A possible mechanism for the hydrogen chemisorption induced structural transformation is also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 7543-7558 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Temperature programmed desorption (TPD) and low energy electron diffraction (LEED) were utilized to study the interaction of atomic hydrogen with single crystal diamond C(111) surface. From isotherm and isostere analysis of TPD spectra acquired at various sample heating rates ranging from 0.6 K/s to 30 K/s, the kinetic parameters were extracted. It is found that molecular hydrogen desorption from the C(111) surface exhibits the first-order kinetics. This result is confirmed by no apparent shift in peak temperatures of TPD spectra for hydrogen coverage above 0.2 ML. At lower coverage regime, the isothermal desorption experiment also indicates the first-order desorption kinetics. A nearly coverage-independent activation energy of (3.7±0.1) eV and a prefactor of (9.5±4.0)×1013 s−1 are obtained except at relatively low coverages (below ∼0.2 ML). In addition, the half-order LEED spots intensity decreases linearly with increase of the hydrogen coverage and drops to zero at ∼0.5 ML. These results are interpreted with a model that during adsorption hydrogen atoms segregate to form metastable, highly hydrogenated domains from where hydrogen atoms recombine and desorb concertedly as the substrate surface is heated up. The comparison of this work with the hydrogen adsorption and desorption on silicon surfaces is also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 30 (1991), S. 5217-5225 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 3 (1970), S. 735-740 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 10 (1977), S. 708-710 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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