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  • 1
    Electronic Resource
    Electronic Resource
    Superconducting Sr0.875Nd0.125CuO2−δ thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4047-4051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase Sr0.875Nd0.125CuO2−δ (SNCO) thin films of the "infinite-layer'' structure were fabricated by a pulsed-laser deposition technique. The films directly grown on SrTiO3 (100) substrates had superconductivity onset temperatures around 20 K, but zero resistances were not observed down to 4.2 K. The a-axis length of the film samples did not exceed the values reported for bulk SNCO samples. It was demonstrated that, when deposited onto a Pr2CuO4 buffer layer formed on a SrTiO3 substrate, the a-axis length of the thin film SNCO increased up to 0.395 nm which was comparable to that for bulk SNCO. The film sample exhibited a zero resistance state below 7 K. Thermoelectric-power measurements indicated that the carrier density for the film deposited on a Pr2CuO4 buffer layer was higher than that for the film fabricated without a buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354448
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  • 2
    Electronic Resource
    Electronic Resource
    Superconductor-insulator transition and electric field effect of YyPr1−yBa2Cu3O7−x thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7849-7853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport characteristics of YyPr1−yBa2Cu3O7−x thin film systems were systematically investigated as a function of the Y concentration and film thickness. The films in the superconducting state changed their transport characteristics to those of the nonsuperconducting state when the film thickness was decreased beyond the value at which the film sheet resistance is equal to the quantized sheet resistance h/4e2. This phenomenon is a kind of superconductor-insulator transition. The resistance-temperature characteristics in the insulator phase are a result of the variable-range-hopping conduction between localized states. The electric-field effect was measured especially in the insulator phase. The resistance modulation ratio ΔR/R in the insulator phase was much greater than the carrier density modulation ratio ΔN/N. The ratio of ΔR/R to ΔN/N increased as the Y concentration increased. In particular, the (ΔR/R)/(ΔN/N) value reached as high as 50 for a Y0.9Pr0.1Ba2Cu3O7−x film in the insulator phase. Higher (ΔR/R)/(ΔN/N) values effectively enhance the performance of superconducting field effect transistors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362393
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6459-6463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure was investigated by secondary-ion mass spectroscopy, Raman spectroscopy, and atomic force microscopy. Ge atoms diffused out through the strained-Si layer during heat treatment of 1000 °C for 1 h. The activation energy of Ge diffusion in strained Si was 3.3 eV, which was lower than the value in unstrained Si (4.7–5.3 eV). Strain in the strained-Si layer did not change after thermal treatment at 950 °C or less for 1 h. Slip lines due to strain relaxation formed at the surface of the strained-Si layer for the samples treated at 950–1000 °C for 1 h. For practical application of the strained-Si/Si0.7Ge0.3 heterostructure to electron devices, the maximum thermal budget should be made less than that equivalent to 900 °C annealing for 1 h. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371004
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  • 4
    Electronic Resource
    Electronic Resource
    Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2948-2950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-Si n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated on molecular-beam epitaxially grown strained Si with various Si1−xGex buffer layers. Effective electron mobility in n-MOSFETs with a Si1−xGex (x=0.2, 0.3) graded buffer layer was 60% higher than that in an unstrained-Si n-MOSFET. However, mobility of samples with a Si1−xGex buffer layer on a low-temperature grown Si buffer layer was not increased as much as that of samples on a graded buffer layer. Atomic-force microscopic observation suggests that the power spectrum of surface roughness of the strained-Si layer varies according to the buffer layer, and this variation may affect the enhancement of mobility. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125197
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  • 5
    Electronic Resource
    Electronic Resource
    High-frequency properties of SrTiO3 thin-film capacitors fabricated on polymer-coated alloy substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 261-263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (200 °C) sputter deposition of SrTiO3 (STO) thin films by using ultrahigh-density ceramic target enabled us to fabricate capacitors on polyimide-isoindroquinazoline dione (PIQ)- or benzocyclobutene (BCB)-coated alloy substrates. Complex impedances of the capacitors were analyzed. Capacitances of the 0.01 mm2 area capacitors with 200-nm-thick STO films were around 22 pF and were not dependent on frequency up to 8 GHz. Leakage-current densities of the films were lower than 10−6 A/cm2 at an applied voltage of 10 V and dielectric loss tangents were lower than 10−6. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120704
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    Paper (German National Licenses)
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