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  • 1
    Electronic Resource
    Electronic Resource
    Stimulation of crystallin synthesis in embryonic brain cells in culture (1986)
    Springer
    Development genes and evolution 195 (1986), S. 15-21 
    Details
    ISSN: 1432-041X
    Keywords: δ-crystallin ; Chick embryonic brain ; Cell culture ; Ectopic expression
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Expression of δ-crystallin, a lens-specific protein, in 6-day-old chick embryonic brain cells was examined in situ and in vitro. The presence of minute amounts of δ-crystallin and its mRNA (δ-mRNA) in brain cells in situ was demonstrated by immunoblot and Northern blot analysis. In spreading cultures of the brain cells, δ-crystallin and δ-mRNA showed a significant increase from their in situ level. Immunohistological staining (peroxidase antiperoxidase) with monospecific anti-serum against δ-crystallin revealed that δ-producers were both epithelial cells and dendritic cells. Neither lentoidogenesis nor α-crystallin expression was observed. Stimulation of δ-crystallin synthesis in cultured brain cells differed when compared with transdifferentiating cultures of neural retina cells. In the latter, δ-crystallin synthesis occurred concomitantly with differentiation of morphologically distinct lens cells containing α-crystallin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00444037
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  • 2
    Electronic Resource
    Electronic Resource
    Transdifferentiation of putative neuronal cells of neural retina into lens: A demonstration by chick-quail chimeric cultures (1983)
    Springer
    Development genes and evolution 192 (1983), S. 256-261 
    Details
    ISSN: 1432-041X
    Keywords: Transdifferentiation ; Transdetermination ; Cellular metaplasia ; Neural retina ; Lens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary To elucidate the cell-type origin of lens cells, which differentiate in stationary cultures of neural retina, chimeric cultures between chick and quail cells were made to recombine xenoplastically the different cell fractions separated from 8- to 9-day cultures of 3.5-day-old embryonic neural retinal cells by means of centrifugation in Percoll. Extensive lentoidogenesis occurred in the recombination of the N2-fraction (consisting mostly of small round cells) with the E-fraction (containing a number of flattened epithelial cells). Taking advantage of the difference in electrophoretic mobility of chick and quail δ-crystallin, it was shown that this lens-specific protein, synthesized in the chimeric cultures, was mostly of the species-specificity of N2. Microscopic observations of histological sections of cell sheets of quail N2- and chick E-fraction chimeric cultures revealed that most cells with δ-crystallin, as identified by means of immunohistological detection, are provided with a nuclear marker characteristic of quail. By determining the level of activity of choline acetyltransferase and by examining the stainability with a fluorescent dye (Merocyanine-540), it was suggested that cells in the N2-fraction are primitive neuroblast-like cells. Thus, we can conclude that putative neuronal cells in early cultures of avian embryonic neural retina can transdifferentiate into lens cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00848657
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1600-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article the ionization rate of phosphorus doped in poly-Si gate and band gap narrowing caused by carrier–carrier interactions and carrier–ion interactions are self-consistently calculated by using a simple algorithm that is formulated phenomenologically. As a result, the ionization rate is found to be unity when the phosphorus concentration is less than 3×1019 cm−3, and becomes lower rapidly with the increase of the concentration larger than 3×1019 cm−3. Using this result, in a wide oxide voltage region, we can reproduce the oxide voltage dependence of the measured tunneling current from the gate in various samples (tOX=2.1, 2.8, and 3.4 nm) with the same tunneling mass (mOX=0.42m0), where m0 is the free electron mass. In particular, we show why the incomplete ionization can reproduce the tunneling current from the gate even in a lower oxide voltage region where the complete ionization cannot do so. Furthermore, a local band gap narrowing, which is described by an additional band gap narrowing due to exchange–correlation interactions of carriers induced by a local potential, is included in the present calculation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368868
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  • 4
    Electronic Resource
    Electronic Resource
    Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3551-3557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a silicon single-electron tunneling device fabricated in an ultrathin (∼3 nm) silicon-on-insulator (SOI) film whose surface is undulated by an alkaline-based solution. The nanometer-scaled undulation in the ultrathin film results in great SOI thickness variations and brings about large electron-potential fluctuations, due to the difference of the quantum confinement effects from one part to another. Consequently, a number of quantum dots are effectively formed in the undulated ultrathin SOI film. This device shows clear Coulomb blockade oscillations at 80 K, as well as nonvolatile single-electron memory functions even at room temperature. The measurements of the undulation with atomic force microscopy reveal that the undulation has two correlation lengths. Based on the analysis of electrical characteristics, it is concluded that the Coulomb blockade oscillations are dominated by a quantum dot formed by the longer-correlation-length undulation and that single-electron memory effects are due to quantum dots formed by the shorter-correlation-length undulation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392959
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  • 5
    Electronic Resource
    Electronic Resource
    Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3992-3994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Source-side hot-electron generation is experimentally demonstrated in Schottky source metal–oxide–semiconductor field-effect transistors (MOSFETs). An asymmetric n-type MOSFET having a CoSi2 layer in place of one of the n+ source/drain regions has been fabricated and intensively investigated. When the CoSi2 layer is used as the source, large gate current and negative-differential conductance (NDC) are simultaneously observed, whereas, when the n+ region is used as the source, both gate current and NDC are not observed. By comparing the device characteristics before and after the NDC observation, it is concluded that the gate current is due to hot electrons generated at the Schottky source side and the NDC is caused by trapped electrons in the oxide. These source-side hot electrons will open up the way to the realization of deca-nanoscaled high-speed devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126845
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  • 6
    Electronic Resource
    Electronic Resource
    Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 601-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technology for relaxing top SiGe layers with low dislocation density on Si substrates, without using thick SiGe buffer structures. By introducing a thin strained SiGe layer and the internal-oxidation (ITOX) process following the separation-by-implanted-oxygen (SIMOX) process, we have experimentally demonstrated relaxed SiGe-on-insulator (SGOI) substrates with the Ge content of 20%, and it has been realized that their dislocation density is a factor of 20 lower than that of SGOI with SiGe buffer layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435799
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1128-1130 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of stressing polarity dependence of charge-to-breakdown, Qbd, in thin SiO2 is discussed based on the temperature dependence of Qbd for both stressing polarities using wet and dry oxides. It was found that the temperature dependence of Qbd, which increases with decreasing temperature in the high temperature region and tends to saturate in the low temperature region, is identical irrespective of the stressing polarity and the oxidation condition. It has been proposed that the strain gradient from Si/SiO2 interface to SiO2/gate electrode interface determines directly both the Si–H bond density which dominates Qbd in high temperature region and the strained Si–O bond density which dominates Qbd in the low temperature region, irrespective of gate polarity and of oxidation condition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117080
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  • 8
    Electronic Resource
    Electronic Resource
    Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1567-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phonon-limited mobility of strained Si metal–oxide–semiconductor field-effect transistors (MOSFETs) fabricated on a SiGe substrate is investigated through theoretical calculations including two-dimensional quantization, and compared with the mobility of conventional (unstrained) Si MOSFETs. In order to match both the mobility of unstrained Si MOSFETs and the mobility enhancement in strained Si MOSFETs, it is necessary to increase the coupling of electrons in the two-dimensional gas with intervalley phonons, compared to the values used in conventional models. The mobility enhancement associated with strain in Si is attributed to the following two factors: the suppression of intervalley phonon scattering due to the strain-induced band splitting, and the decrease in the occupancy of the fourfold valleys which exhibit a lower mobility due to the stronger interaction with intervalley phonons. While the decrease in the averaged conductivity mass, caused by the decrease in the occupancy of the fourfold valleys, contributes to the mobility enhancement in bulk strained Si, it is not necessarily adequate to explain the mobility enhancement for two-dimensional electrons in strained Si. This is suggested by the fact that the mobility limited by intravalley acoustic phonon scattering, which is the dominant scattering mechanism, has almost the same value in the two- and the fourfold valleys, because the difference in the conductivity mass is compensated by differences in the inversion-layer thickness and the valley degeneracy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362953
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  • 9
    Electronic Resource
    Electronic Resource
    On the NMR properties near the 3He A-normal transition (1975)
    Springer
    Journal of low temperature physics 18 (1975), S. 309-314 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: The NMR properties of the A phase of liquid 3He very close to the transition temperature are investigated on the basis of the Leggett theory and of the assumption that the state is of the Anderson-Brinkman-Morel type. The explicit temperature dependence of the NMR frequencies is obtained and is shown to be quite different from that expected from a simple extrapolation of the lower temperature data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00118160
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  • 10
    Electronic Resource
    Electronic Resource
    Roles of a neuronal cell-surface molecule, neuropilin, in nerve fiber fasciculation and guidance (1997)
    Springer
    Cell & tissue research 290 (1997), S. 465-470 
    Details
    ISSN: 1432-0878
    Keywords: Key words: Cell-surface molecule ; Cell adhesion ; Nerve fiber fasciculation ; Nerve fiber guidance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract.  Neuropilin is a cell-surface glycoprotein that was first identified in Xenopus tadpole nervous tissues and then in chicken and mouse. The primary structure of neuropilin is highly conserved among these vertebrate species. The extracellular part of the molecule is composed of three domains referred to as a1/a2, b1/b2, and c, each of which is expected to be involved in molecular and/or cellular interactions. Neuropilin can mediate cell adhesion by heterophilic molecular interaction. In all vertebrate species examined, the neuropilin protein is restricted to axons of particular neuron classes, and at stages when axon growth is active. The gain and loss of function of neuropilin in developing mouse embryos causes defasciculation and incorrect sprouting of nerve fibers. These findings suggest that neuropilin serves in a variety of neuronal cell interactions by binding to a variety of molecules, and that it plays essential roles in nerve fiber fasciculation and guidance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004410050954
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