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Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer (1995)

Tanimura, J. ; Wada, O. ; Ogama, T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 6223-6227

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Structure of stacking faults formed in pairs in a ZnSe epitaxial layer grown by gas source molecular beam epitaxy on a GaAs(001) buffer layer was determined with transmission electron microscopy. Extrinsic type stacking faults were formed on (111) and (1¯1¯1) planes with the same polarity, which was determined by convergent-beam electron diffraction. The two stacking faults meet at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations at the edge of the stacking faults were found to be the Shockley type ones with a Burgers vector of 1/6〈211〉. Probable formation processes of the stacking faults have been discussed. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359152

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