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  • 1
    Electronic Resource
    Electronic Resource
    Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1745-1752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hole diffusion length in liquid-encapsulated-czochralski (LEC) GaAs monocrystals (Si-doped, n(approximately-equal-to)1015–1016 cm−3) in the range (0.4–3.0) 10−4 cm, has been determined by photon and electron bombardment through semitransparent Au or Cr Schottky electrodes. A minority-carrier lieftime in the range (0.3–9.7) 10−9 s was estimated. Schottky barrier diodes with abrupt junctions giving optimum electrical characteristics were prepared. The absorption length of the examined samples was evaluated by optical transmission measurements. The diffusion length investigation, which was carried out by the steady-state surface photovoltage (SPV) and the scanning electron microscope electron-beam-induced current (SEM-EBIC) techniques, has been related to the spectral quantum efficiency of Schottky diodes. SPV and EBIC techniques are emphasized as complementary methods for the investigation of bulk photoelectronic properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337269
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  • 2
    Book
    Book
    Grid computing for electromagnetics / (2004)
    Boston, Mass. u.a. :Artech House,
    Details
    Title: Grid computing for electromagnetics /
    Author: Tarricone, Luciano
    Contributer: Esposito, Alessandra
    Publisher: Boston, Mass. u.a. :Artech House,
    Year of publication: 2004
    Series Statement: Artech House electromagnetic analysis series
    ISBN: 1-580-53777-4
    Type of Medium: Book
    Language: English
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