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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic proximity effect at a superconductor–rare-earth oxide interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3368-3370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using spin-polarized electron tunneling, we have observed an enhancement of an applied magnetic field in a thin superconducting Al film in contact with an oxide of a rare-earth metal. The Zeeman splitting of the superconducting density of states of this Al film is 2μ(B+B*), where B is the applied field and B* is of the order of the magnetization of the rare-earth oxide. The field is applied parallel to the plane of the film. Oxides of Eu, Gd, Tb, Dy, and Er have produced this effect. The enhancement can be quite large: an Al film in contact with Gd2O3 in an applied field of 1.5 T behaves as though it were in a field of over 4 T. Both S-I-S tunneling and critical field measurements provide quantitative confirmation of the enhancement. A proximity model by de Gennes accounts qualitatively for some but not all of the observations, and quantitative aspects of the experiment are not understood. This proximity effect may provide a method of studying the surface magnetism of insulating magnetic materials in an applied magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338774
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  • 2
    Electronic Resource
    Electronic Resource
    Electron tunneling into Bi thin films under pressure (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 191-194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the pressure dependence of the tunneling resistance of tunnel junctions between 300-nm-thick Bi films and 20-nm-thick films of Al deposited at room temperature. Native Al oxide formed by oxygen glow discharge provided the tunnel barrier. The resistance was measured as a function of voltage from 0 to about 1 V. Measurements were made from room temperature to below the superconducting transition temperature of the Al film. The pressure range covered was from 0 to about 8 kbar. The resistance decreases with increasing pressure in a way easily described by simple tunneling theory. In the resistance curves we observe pressure dependence of structure, which has in the past been associated with the pressure dependence of the Bi band structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336861
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  • 3
    Electronic Resource
    Electronic Resource
    Longitudinal magnetoresistance of CrO2 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 428-429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal magnetoresistance (LMR) of thin films of the putative half-metallic ferromagnet CrO2 deposited by chemical vapor deposition onto TiO2/Si(111) substrates has been measured in the temperature range 0.55 K〈T〈4.2 K in magnetic fields up to 7 T. The dependence of the LMR on small changes in the angle between the applied field and the substrate plane was also measured at T=1.3 K. X-ray diffraction measurements showed that these films have a textured rutile structure with a axis and 〈110〉 orientations normal to the substrates. The LMR of these films at about 3 T was about twice that of similar films that showed only a 〈100〉 orientation normal to their ZrO2 substrates. A change in the substrate orientation relative to the applied field direction of 10° caused a 25% decrease in the magnitude of the LMR at 3 T. The results suggest that the existence of the 〈110〉 crystallite structure strongly affects the magnetoresistance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123050
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  • 4
    Electronic Resource
    Electronic Resource
    Superconductor-insulator-superconductor tunneling in Ba1−xKxBiO3 grain boundaries (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2824-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared single grain boundaries of the superconductor Ba1−xKxBiO3 by growing epitaxial thin films of this compound on SrTiO3 bicrystal substrates. The four-terminal current-voltage characteristics of the grain boundaries showed clear superconductor- insulator-superconductor (SIS) tunneling behavior. The leakage at zero bias was smaller than 0.3% at 4.2 K. The differential conductance displayed sharp symmetric peaks at 2Δ close to 6.5 mV. At higher bias, an increase in conductance proportional to V2 was observed. The temperature dependence of the conductance was found to be in qualitative accord with conventional SIS theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110299
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  • 5
    Electronic Resource
    Electronic Resource
    Improved laser-ablated thin films of NdCeCuO by use of N2O (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2715-2717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the electron-doped superconductor Nd1.85Ce0.15CuO4−δ were prepared by laser ablation in O2 and N2O ambients. Although films prepared in an O2 ambient need to be reduced to become superconducting, the use of a lower oxygen pressure during deposition produces inferior films. A more metallic character can be obtained by increasing the O2 pressure during deposition. The substitution of N2O for O2 results in films that are superconducting without a separate reduction step, with a sharp transition at about 16 K. A short vacuum anneal at the deposition temperature yields reproducible films with Tc=20 K, without change in the transition width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108070
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  • 6
    Electronic Resource
    Electronic Resource
    In situ deposition of superconducting Bi-Pb-Sr-Ca-Cu-O thin films on MgO(100) substrates by rf magnetron sputtering and laser ablation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2498-2500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of Bi-Pb-Sr-Ca-Cu-O (BPSCCO) have been prepared in situ by magnetron sputtering and laser ablation onto heated MgO (100) substrates. Post-deposition annealing at higher temperatures was not required to obtain superconducting BPSCCO films, and a narrow temperature window in a very similar temperature region was observed for the growth of oriented films for both the laser ablation and magnetron sputtering technique. The best films were smooth and shiny with their c axes oriented perpendicular to the substrate surface but scanning electron microscope analysis showed particulates on the film surface. Room-temperature resistivity values of the order of 2–3 mΩ cm were obtained for these films. At 70 K and 8 T, the resistivity ratio for the H⊥ and (parallel) to the plane of the film was ∼25 for an applied current density J of 0.8 A/cm2. Rutherford backscattering analysis on the laser-ablated and sputtered films indicates that the BPSCCO films had 2223 composition while the x-ray diffraction studies indicated mixed 2212 and 2223 phases.〈lz〉 〈lz〉 〈lz〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103839
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