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  • 1
    Electronic Resource
    Electronic Resource
    High-Temperature Creep and Microstructural Evolution of Chemically Vapor-Deposited Silicon Carbide Fibers (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°–1400°C, 190–500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.1999.tb20077.x
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  • 2
    Electronic Resource
    Electronic Resource
    TEM/EELS Characterization of a Sintered Polycrystalline Silicon Carbide Fiber (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A sintered, polycrystalline SiC fiber has been characterized by TEM and EELS. The fibers consist primarily of alpha-SiC (6H-polytype) with a mean grain size on the order of approximately 1 μm. Poorly organized turbostratic carbon is located within porous regions between some grain boundaries and triple junctions of the SiC. In addition, 100 nm spherical boron carbide precipitates are observed intragranularly within the SiC grains. These precipitates have a rhombohedral crystal structure with an approximate stoichiometry of B4C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02585.x
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  • 3
    Electronic Resource
    Electronic Resource
    High-Temperature Oxidation of Boron Nitride: II, Boron Nitride Layers in Composites (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The oxidation of BN composite interphases was examined with a series of model materials. Oxidation was examined in both low-water-vapor (∼20 ppm H2O/O2) environments at 900°C and high-water-vapor (1% and 10% H2O/O2) environments at 700° and 800°C. The low-water-vapor case was explored with layered BN/SiC materials. This case was dominated by borosilicate glass formation, and the 20 ppm water vapor gradually removed the boron from the glass, leaving a larger amount of SiO2 than would be expected from simple SiC oxidation. Layered SiC/BN/SiC materials were also used to study low-water-vapor oxidation effects within the composite. The high-water-vapor case was explored with SiC/BN/SiC minicomposites, and it was dominated by volatilization of BN as HBO2(g), H3BO3(g), and H3B3O6(g). A model for recession of the BN fiber coating was developed based on the gas-phase diffusion of these species out of the annular region around the SiC fiber and concurrent sealing of this annular region by oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb01944.x
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  • 4
    Electronic Resource
    Electronic Resource
    Reactivity and interface characteristics of titanium-alumina composites (1973)
    Springer
    Journal of materials science 8 (1973), S. 151-161 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The reaction kinetics between α-Ti alloys and single crystal sapphire, the phase composition and morphology of the reaction-zone, and the phase compatibility in the system Ti-Al-O were investigated as part of a study to determine the feasibility of fabricating useful Al2O3-reinforced titanium matrix composites. In the temperature range 650 to 1000° C titanium reduces Al2O3 to form a complex reaction layer consisting of two distinct zones; an inner zone adjacent to the Al2O3 of a TiO phase containing isolated particles of (Ti, Al)2O3, presumably, and an outer zone of a Ti3Al phase adjacent to the Ti matrix. The isothermal growth of the reaction layer follows a parabolic rate law. The temperature dependence of the rate constants fits an Arrhenius equation yielding activation energies of 50 to 52 kcal/mol. The high Al alloys, except Ti-6Al-2Sn-4Mo-2Zr, reacted more rapidly than pure Ti indicating that Al diffusion through the reaction zone may be the rate-limiting step.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550662
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