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  • 1
    Electronic Resource
    Electronic Resource
    Raman spectroscopy studies of progressively annealed amorphous Si/Ge superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3088-3092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of a-Si/a-Ge superlattices with periods ranging from 2.5 to 41.2 nm has been studied using Raman spectroscopy. Atomic relaxation and rearrangement at the Si/Ge interfaces occur up to an anneal temperature of 300 °C. Further annealing of the superlattices reveals enhanced diffusion and a retarded crystallization, and these effects are more pronounced in short period superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349287
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of Ta/Ge superlattices studied by Raman spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1761-1763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal behavior of Ta/Ge superlattices has been studied using Raman spectroscopy. The high-frequency Raman spectra, obtained as a function of annealing temperature, reveal no significant change in the superlattice structure up to an anneal temperature of 400 °C. The interlayer diffusion at the Ta/Ge interfaces occurs at 500 °C followed by complete crystallization of the superlattice at 600 °C. Raman scattering from the folded acoustic modes of the superlattices was also employed to study the thermal behavior of superlattices, and the results thus obtained corroborate the above findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353211
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  • 3
    Electronic Resource
    Electronic Resource
    Folded phonon spectra of progressively annealed amorphous Si/Ge superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 508-510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering from folded acoustic modes of amorphous Si/Ge superlattices has been employed to study thermally induced structural changes in samples of different periods. For a superlattice with 13.5-nm period, the position and intensity of the folded phonon doublet, obtained as a function of annealing temperature, reveal (i) the diffusion of Si into the Ge layers up to an anneal temperature of 500 °C without much effect on Si/Ge interfaces, (ii) a severe degradation of Si/Ge interfaces at an anneal temperature of 600 °C, followed by crystallization of the superlattice, and (iii) a nearly complete intermixing of the layers after the 700 °C anneal. A superlattice with a larger period (P=20.5 nm), on the other hand, retains its layered structure even after an anneal of 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350262
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  • 4
    Electronic Resource
    Electronic Resource
    Structural measurements on evaporated a-Si/SiOx superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1274-1277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of evaporated a-Si/SiOx superlattices has been investigated by transmission electron microscopy, Raman scattering, and optical absorption spectroscopy. The layers are smooth and regular, but all three measurements show effects of bond distortions or defects within 1–2 nm of the Si/SiOx interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339680
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  • 5
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of amorphous Ge/SiOx superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5148-5151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopic studies have been performed on a series of vacuum evaporated amorphous Ge/SiOx superlattice films with germanium layer thicknesses between 8 and 200 A(ring) and silicon oxide layer thicknesses between 12 and 300 A(ring). The results show the presence of a Gey (SiOx )1−y interface alloy of thickness (0.7±0.2) nm and average composition of y∼0.35. This alloy region is identified as the residence of the observed germanium bond angle disorder, leaving the pure germanium layers in the superlattices essentially undistorted from the bulk a-Ge structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342423
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  • 6
    Electronic Resource
    Electronic Resource
    Raman study of the relationship between nanoparticles and photoluminescence in spark-processed silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 723-725 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spark-processed silicon (sp-Si) that strongly photoluminesces (PL) in the blue and green regions of the visible spectrum has been analyzed by Raman scattering, in order to probe a possible relationship between the presence and size of Si nanoparticles and PL emission wavelengths. Spatially resolved Raman spectra were measured across spark-processed regions, scanning areas which vary in PL intensity but not wavelength. The observed small shifts and broadenings of the Raman signals indicate the presence of Si particles having diameters of about 15 nm in the central, photoluminescing section of the sp region. Slightly smaller Si crystallites with sizes of about 8–9 nm were found in the halo region which does not contribute to PL. Furthermore, the Raman peak shifts and broadenings are essentially identical for blue and green photoluminescing sp-Si. These results suggest that the PL of sp-Si is not caused by a quantum-size effect which is coupled to the presence of Si nanoparticles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118249
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallization and diffusion in progressively annealed a-Ge/SiOx superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1874-1878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to investigate the structural changes in isochronally annealed a-Ge/SiOx superlattices. The Ge crystallization temperature is found to be higher in superlattices with thinner Ge layers, which can be interpreted in terms of the retardation of nucleation and growth of Ge microcrystallites near the Ge/SiOx interface. Before and after the Ge layers crystallize there is Si diffusion into the Ge layers. The Si appears to be uniformly distributed throughout the Ge layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345616
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  • 8
    Electronic Resource
    Electronic Resource
    Structure of amorphous carbon in amorphous C/Ge multilayers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1753-1756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous C-Ge multilayers have been produced with periods varying from 2.6 to 12.5 nm. We have studied the multilayers using Raman spectroscopy and dc conductivity measurements and found that their properties change significantly when the carbon sublayer thickness is smaller than 2.5 nm. This value corresponds to the proposed dimension of sp2 bonded carbon islands within a-C and we find that our results can be understood in terms of the carbon forming these islands, but the islands becoming disconnected as the nominal carbon layer thickness decreases. The conductivity shows a percolation behavior for the thinnest layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345599
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  • 9
    Electronic Resource
    Electronic Resource
    Photometric determination of variations in the surface conditions for pulsating stars (1986)
    Springer
    Astrophysics and space science 119 (1986), S. 97-99 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Two sets of model atmosphere spectra have been used to determine variations of effective temperature, surface gravity, and radius from multicolour indices measured for pulsating stars. The two model atmosphere sets led to surface parameters that differ by consideraby more than the measurement uncertainties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00648822
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  • 10
    Electronic Resource
    Electronic Resource
    Scattering and absorption of visible light by sea ice (1987)
    [s.l.] : Nature Publishing Group
    Nature 326 (1987), S. 867-869 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The few in situ measurements of the optical properties of sea ice that have been reported have relied on natural light as a source2"4, a choice which limits the utility of the results in elucidating the roles of ice inhomogeneity and anisotropy in the light transport problem. Our approach was to ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/326867a0
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