Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 262-264
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force microscope provides a novel method to define nanostructures and in-plane gates. Two examples, namely antidots and quantum point contacts as in-plane gate transistors have been fabricated and their performance at low temperatures is discussed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121774
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