ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of GaF3 films on GaAs(110) wafers via exposure to XeF2 is studied as a function of substrate temperature with soft x-ray photoelectron spectroscopy. For temperatures between 300 and 550 K, a GaF3 film forms with an interface to the substrate consisting of GaF, elemental As and possibly some AsF. In this temperature range, the films thicken with exposure up to a limit of ∼15 A(ring). The initial F uptake rate increases with elevated substrate temperature without altering the limiting thickness. In addition, there is little variation in the thickness or composition of the film–substrate interface over this temperature range. Above 550 K, XeF2 etches GaAs, leaving a GaAs surface covered with ∼1 monolayer of elemental As. A film growth mechanism is discussed to explain these results. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359570
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