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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 12 (1990), S. 1387-1404 
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Using a nonlinear transport theory, derived from the nonequilibrium statistical operator method, we obtain the equations that govern the evolution of the nonequilibrium state of a highly photoexcited direct-gap polar semiconductor, and its nonequilibrium mobility coefficient. It provides an analytic method that allows for a deep physical insight into the influence of the nonequilibrium irreversible evolution of the plasma in the semiconductor on its transport properties. We demonstrate that, under quite general conditions, the strong dependence of the momentum and energy relaxation times on the irreversible evolution of the macroscopic nonequilibrium state of the system results in the existence of a structured transient mobility,i.e. one with maxima and minima, with or without overshoot. A criterion for the occurrence of this structure is derived as well as several general properties of the ultrafast transient are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 786-786 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 65 (1997), S. 277-285 
    ISSN: 0020-7608
    Keywords: Chemistry ; Theoretical, Physical and Computational Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: We briefly describe a nonclassical nonlinear thermodynamic theory with statistical foundations. This statistical approach is based on a generalization to arbitrary nonequilibrium conditions of the Gibbs ensemble algorithm, the so-called nonequilibrium statistical operator method, which can be considered to be encompassed within the scope of Jaynes' predictive statistical physics. This emerging formalism is used to provide a study of the technoindustrial process of thermal stereolithography (or infrared-laser-induced rapid prototyping). The experimental results are interpreted and the technical requirements fundamental for the success of the process are pointed out.   © 1997 John Wiley & Sons, Inc. Int J Quant Chem 65: 277-285, 1997
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 14 (1983), S. 39-44 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The ultra-fast time-resolved Raman spectra of a highly photoexcited semiconductor plasma is calculated. Information is provided on the time-evolution of irreversible relaxation processes that develop in the system. It is described how plasmon-phonon interference effects in the Raman spectra are affected in the far-from-equillbrium state of the system. We used a theoretical method, based on a generalization of Gibbs algorithm to nonequilibrium situations, and a numerical analysis appropriate for the case of GaAs samples is presented.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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