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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 188-193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic modulation with the wave vector parallel to the [0001] direction was observed in the AlGaN layers of a thick AlGaN/GaN multilayer heterostructure grown by metalorganic chemical vapor deposition. The modulation was attributed to a nearly sinusoidal spatial variation of the Al/Ga ratio with an average periodicity of about 3 nm. The observed periodicity was highly regular and incommensurate with the periodicity of the underlying lattice. The average Al fraction in the AlxGa1−xN layers was estimated to be x=0.115±0.010 and the peak-to-valley amplitude of the modulation was estimated to be Δx=0.075±0.016. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data on second harmonic generation in as-grown BaTiO3 thin films, including the dependence of the second harmonic intensity on the incidence angle and on the polarization direction of the fundamental beam. The data indicate that the effective second harmonic generation coefficient in these films is unrelated to the crystallographic orientation of the BaTiO3 as determined by x-ray diffraction. We suggest as an alternative explanation electric-field-induced second harmonic generation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2801-2803 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Accelerated water uptake tests have been used to compare the onsets of destruction of the ability to transfer shear stress at fibre/matrix interfaces in epoxy matrix glass reinforced plastic (GRP) manufactured with each of four different fibres. The ability to transfer shear stress has been monitored directly by measurement of stress birefringence through and adjacent to individual fibres. Full theoretical and practical details of the experimental method are given. “S” glass fibres, drawn into an atmosphere of ammonia in an attempt to promote the deposition of primary amines and/or secondary amines, rapidly lose their ability to receive shear stress from the matrix. This is attributed to neutralization of CO2 by NH3 within interfacial pockets of dissolved water, and the associated generation of osmotic pressure. Commercial samples of “S” and “E” glass fibres and “E” glass fibres drawn into an atmosphere of ammonia, all survive much larger water uptakes although, in the case of both kinds of “E” glass fibre, immersion in boiling water eventually gives rise to interfacial pressure pockets. These pressure pockets are also attributed to osmosis, with the role of dissolved solutes tentatively ascribed to the modifying agents present in “E” glass formulations.
    Type of Medium: Electronic Resource
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