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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of the reaction of HSO with O3 at temperatures 273–423 K (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 387-392 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate coefficient of the reaction of HSO with O3 at five temperatures in the range 273–423 K was determined by means of the discharge-flow/laser-induced-fluorescence technique. The laser-induced fluorescence of HSO was detected by the gated photon-counting technique; a detection limit ∼4×109 molecules cm−3 was achieved. The reaction was carried out under pseudo-first-order conditions with [O3](very-much-greater-than)[HSO]; the rate coefficient was determined to be k=(4.7±1.0)×10−14 cm3 molecule−1 s−1 at 298 K, approximately 30% greater than, but within experimental uncertainty of the only previous measurement by Wang and Howard by means of the discharge-flow/laser-magnetic-resonance technique. The temperature dependence of the rate coefficient is expressed in the Arrhenius form, k(T)=(2.1±0.7)×10−12 exp[−(1120±320)/T] cm3 molecule−1 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466952
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  • 2
    Electronic Resource
    Electronic Resource
    Photoionization spectra and ionization thresholds of CH3SO, CH3SOH, and CH3SS(O)CH3 (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7402-7411 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoionization efficiency (PIE) spectra of CH3SO, CH3SOH, and CH3SS(O)CH3 were measured in the spectral range 110–150 nm by means of a discharge flow system coupled to a photoionization mass spectrometer that employs a synchrotron radiation source. These species were generated by reacting O atoms with CH3SSCH3 in the flow tube; a microwave discharge was employed to produce O atoms from O2. Alternatively, C2H5SCH3 replaced CH3SSCH3 to form CH3SO, CH3SOH, and other products. Ionization thresholds of 8.99±0.02, 8.67±0.03, and 8.82±0.05 eV were determined for the first time for CH3SO, CH3SOH, and CH3SS(O)CH3, respectively. The former two values agree well with theoretical calculations with the G2 method. The latter value fits satisfactorily with those predicted for CH3SS(O)CH3 with the G2MP2 method; the G2 method was not employed in this case due to the numerous atoms in this molecule. Ionization thresholds of CH3S and CH3S2 were also determined to be 9.27±0.03 and 8.62±0.05 eV, respectively, in agreement with recent experimental reports. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472595
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the rate constant for the reaction OH + H2S in He, N2, and O2 (1985)
    New York, NY : Wiley-Blackwell
    International Journal of Chemical Kinetics 17 (1985), S. 1201-1214 
    Details
    ISSN: 0538-8066
    Keywords: Chemistry ; Physical Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The rate constants of the reaction between OH and H2S in He, N2, and O2 over the temperature range 245-450 K have been determined using the discharge flow-resonance fluorescence technique. At 299 K, k1 = (4.4 ± 0.7) × 10-12 cm3 molecule-1 s-1. The temperature dependence of the rate constant can be fitted either by k1 = 5.6 × 10-12 exp(-57/T) or by k1 = (3.8 × 10-19)T2.43 exp(732/T) to within 8 and 9%, respectively. However, the non-Arrhenius behavior can be confidently confirmed. The absence of the pressure dependence and the third-body effect at low temperature suggest that the complex formation mechanism is not important over the temperature range of our study.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/kin.550171106
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