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  • 1
    Electronic Resource
    Electronic Resource
    Properties of Multicrystalline Silicon Heat Treated by Classical and Rapid Thermal Processing (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 37-38 (Mar. 1994), p. 415-420 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.37-38.415.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 69-74 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.69.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon (2003)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 95-96 (Sept. 2003), p. 229-234 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.95-96.229.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Deuteration effects on the electron mobility in the a direction of naphthalene
    Amsterdam : Elsevier
    Chemical Physics Letters 75 (1980), S. 267-270 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(80)80510-0
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  • 5
    Electronic Resource
    Electronic Resource
    Mobilities of electrons and holes in naphthalene and perdeuterated naphthalene
    Amsterdam : Elsevier
    Chemical Physics Letters 100 (1983), S. 34-36 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(83)87257-1
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  • 6
    Electronic Resource
    Electronic Resource
    Minority carrier lifetime degradation in boron-doped Czochralski silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2397-2404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The minority carrier lifetime in boron-doped oxygen-contaminated Czochralski (Cz) silicon is strongly reduced under illumination or carrier injection. This process can be fully reversed by a 200 °C anneal step. In several recent studies it was shown that boron and oxygen are the major components of the underlying metastable Cz-specific defect. The energy level of the defect in its active state A was determined to be around midgap [Schmidt et al., J. Appl. Phys. 86, 3175 (1999)] while the energy level of the defect in its passive state P is very shallow. The Cz-specific defect in its passive state can be identified with the shallow thermal donor. The kinetics of the excess carrier-induced transformation from state P to state A can be described using recombination-enhanced defect reaction theory. On the basis of these experimental facts different solutions for the reduction or elimination of the metastable defect are suggested. Two promising solutions are discussed in more detail: the use of gallium-doped Cz silicon and the introduction of high-temperature anneals into the process sequence. Gallium-doped Cz silicon shows no degradation and excellent lifetimes over a wide resistivity range, although the concentration of interstitial oxygen is in the same range as in standard Cz silicon. Stable solar cell efficiencies comparable to FZ silicon have been achieved. If standard boron-doped Cz silicon is used, the defect concentration can be reduced permanently by a high-temperature anneal using conventional tube or rapid thermal processing. This leads to an improvement of the carrier lifetime by a factor of 2–3. Nevertheless, it is always necessary to use an optimized set of process parameters because otherwise the lifetime of all oxygen-contaminated materials (including gallium-doped Cz silicon) is severely reduced © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389076
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  • 7
    Electronic Resource
    Electronic Resource
    Field-effect passivation of the SiO2Si interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 683-691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-effect passivation of the interface of thermal oxides on silicon is experimentally investigated by depositing corona charges on the oxide of solar cells and of lifetime test structures. The open circuit voltage of solar cells with interdigitated rear contacts can be increased by +12 mV or decreased by −34 mV, respectively, by depositing positive or negative corona charges on top of the front oxide. The resulting effective surface recombination velocity, Seff, is determined on carrier lifetime test structures for different injection levels and charge densities using microwave-detected photoconductance decay and a new expression for the Auger-limited bulk lifetime. Seff can be varied between 24 cm/s and 538 cm/s on a 1 Ω cm p-type wafer with a thermal oxide of 105 nm thickness. The measurements are compared with theoretical predictions of an analytical model for the calculation of the surface recombination. Measured values for the capture cross sections and interface trap densities are used for the calculation. The model predicts an optimum passivation for strong positive compared to strong negative charge densities. This is due to the asymmetry of the capture cross sections for electrons and holes. This prediction is in very good agreement with the measured Seff values. However, the predicted Seff values of well below 1 cm/s for 1 Ω cm p-type silicon cannot be achieved in the experiment. This discrepancy can be explained by an inhomogeneous charge distribution resulting in potential fluctuations and additional loss currents. With a new extended analytical model for the calculation of Seff the measured Seff values can be described quantitatively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370784
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  • 8
    Electronic Resource
    Electronic Resource
    Analysis of one-sun monocrystalline rear-contacted silicon solar cells with efficiencies of 22.1% (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4335-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 21.4% efficient rear-contacted cells (RCC) with interdigitated contact grids processed at the Fraunhofer ISE on 1.25 Ω cm float-zone (FZ) silicon are analyzed in detail. The comprehensive description does not only include a two-dimensional numerical device simulation, but also a detailed analysis of the optical carrier generation using optical ray tracing and determination of the losses due to distributed metal resistance and perimeter currents employing circuit simulation. Bulk and surface recombination losses are separated, combining carrier lifetime and open-circuit voltage measurements with numerical device simulation. The interface surface recombination velocity of the thermally oxidized emitter covering the front surface is deduced to be 1500 cm/s and the bulk diffusion length within the 1.25 Ω cm FZ silicon base is 1200 μm. Despite this excellent bulk diffusion length, the simulations reveal that at a maximum power point 80% of the total recombination is due to Shockley–Read–Hall recombination in the base. It was determined that losses due to the distributed metal resistance within the contact grid (including nongeneration losses) caused an fill factor decrease of 1% absolute. Loss currents flowing out of the cell perimeter caused an additional fill factor loss of 1.5% absolute. It was predicted that changing the surface concentration of the front and rear emitter diffusion from 5×1018 to 1×1018 cm−3, while keeping the sheet resistance constant, effected a relative improvement of 3% in the efficiency of the RCC structure. In fact, this modification has lead to an increase in the realized cell efficiency from 21.4% to 22.1% (VOC=697.6 mV, JSC=39.8 mA/cm2, and FF=79.4%), i.e., a relative improvement of 3.3%. This cell has an efficiency of 18.6% (VOC=696.5 mV, JSC=33.9 mA/cm2, and FF=78.8%) if illuminated from the rear side. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446657
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  • 9
    Electronic Resource
    Electronic Resource
    Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2059-2070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier lifetime is very sensitive to electrically active defects. Apart from detecting the presence of recombination active defects, lifetime measurements allow for a direct identification of defects if the temperature and injection dependence of carrier lifetime is analyzed. In the present work, the Shockley–Read–Hall (SRH) equation is analyzed from a theoretical point of view in order to demonstrate the possibilities and basic restrictions of i(underbar)njection- and t(underbar)emperature-d(underbar)ependent l(underbar)ifetime s(underbar)pectroscopy (IDLS and TDLS), respectively. To show the variety of attainable curve shapes and to evaluate their suitability for a spectroscopic determination of defect parameters, the general impact of the defect and material parameters on the injection and temperature dependence of SRH lifetime is investigated systematically. From this the basic requirements for an unambiguous defect characterization are derived. The experimental applicability of lifetime spectroscopy is demonstrated by TDLS and IDLS measurements performed on an intentionally molybdenum contaminated Si sample using the microwave-detected photoconductance decay technique and the quasi-steady-state photoconductance technique, respectively. The energy level of 0.335 eV below the conduction band determined from TDLS corresponds well with deep level transient spectroscopy-values reported in literature and could also be determined from the corresponding IDLS curve though not unambiguously. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428095
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrapure, high mobility organic photoconductors (1985)
    Springer
    Applied physics 36 (1985), S. 163-170 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 L ; 72.20 H ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This contribution demonstrates that high charge carrier mobility (〈400 cm2/Vs) is an inherent property ofultrapure organic molecular crystals at low temperatures. Small concentrations of traps, however, can completely obscure these microscopic transport properties on macroscopic scales. We describe extensive purification procedures with naphthalene and perylene, which led to the observation of high mobilities. At the same time we demonstrate that charge carrier transport measurements are a sensitive tool for the analytical characterization of high purity organic molecular crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624938
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