ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Surface integrity of Sapphire wafer is the frontier technology to grow high qualityAlN/GaN films for high brightness light-emitting diode. Surface damage measurement methods forsingle crystal sapphire were introduced firstly. Classical types of surface deformation induced byabrasive machining, such as lattice deformation, strain, scratch, crack versus abrasive grits andchemical reaction were compared. With the development of modern grinding technology, depth ofthe damaged surface layer decreases from 10μm to 2μm or much less. Both crack, latticedeformation, twinning and strain were detected along the ground surface, only dislocation and strainwere appeared for polished sapphire surface. Usually, depth of the damaged layer was less than300nm using mechanical polishing process. Chemical mechanical polishing achieved the lowestdepth of the damaged surface and best surface roughness, scratch depth was used to descript thedamaged depth, which is about 1 nm, and so called no damage to the layer remains during chemicalmechanical polishing process
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.311.pdf
Permalink