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  • 1
    Electronic Resource
    Electronic Resource
    Manufacture, observation, and test of membranes with locatable single pores (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1654-1660 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for generating single pores down to 0.1 μm diameter in the center of a large circular foil is described, based on nuclear tracks. The foil is framed by a tension ring which enables one to handle the foils in a well-defined precise way. The single pore has a lateral displacement of ±0.1 mm with respect to the tension ring center. The foils used are polycarbonate of the type Makrofol and have thicknesses between 2 and 10 μm. For calibration of the single pore diameters, multiple nuclear tracks between 0.1 and 3.5 μm diameter are etched and observed by microscopy. The microscopic observations are compared with gas-flow measurements, using two alternative methods: multiple holes are tested under viscous flow conditions of N2 gas at normal temperature and pressure; single holes are tested under collisionless flow conditions of 4He gas at liquid-nitrogen temperature, using a capacitance method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138545
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of (011) Al on (100) Si by vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 37-39 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology, orientation relationship and interface structure of Al vapor deposited on (100) Si single-crystal substrates were investigated by x-ray diffraction and transmission electron microscopy. It was shown that vapor growth at room-temperature results in a random (111) texture whereas growth at 280 °C leads to films with high-quality (011) epitaxy and a high degree of grain boundary faceting. Due to alignment of close-packed directions in the plane of the interface there are two orientation variants with a morphology characterized by an oriented 90° 〈011〉 mazed bicrystal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107660
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of (001) Al on (111) Si by vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of (001) Al thin films on Si (111) single crystal substrates by vapor deposition was studied by means of x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy techniques. It was observed that the films deposited at room temperature exhibit random (111) texture, while the films deposited at 280 °C show perfect epitaxial alignment of (001) Al planes with (111) Si planes. In the interface plane 〈110〉 close packed directions in both the film and the substrate are parallel and hence Al grows with three orientation variants in a unique mazed tricrystal arrangement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107726
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    TEM characterization of indented polycrystalline Y-PSZ (1993)
    Springer
    Journal of materials science 28 (1993), S. 6709-6714 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microstructural characterization of indented Y-PSZ polycrystals has been investigated by TEM. The observations show two different regions associated with the indent: a large core with a high density of monoclinic particles transformed from the initial tetragonal variant, and an inner core region with a high density of dislocations. The core region can be correlated with previous observations of a crack exclusion zone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00356419
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Defects in antiferromagnetic nickel oxide (1982)
    Springer
    Journal of materials science 17 (1982), S. 3281-3287 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Antiferromagnetic domain boundaries in single-crystal NiO specimens have been examined by transmission electron microscopy. The domain boundaries were found to move through the matrix as a result of beam-induced thermal stresses. Movement of the boundaries was restricted by dislocations. Some evidence is given to show that domain boundaries may serve as nucleation sites for the reduced species in gaseous reduction of NiO. The presence of vacancy loops in nickel oxide has been established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01203496
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    Paper (German National Licenses)
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