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  • 1
    Electronic Resource
    Electronic Resource
    Formation of continuous CoSi2 layers by high Co dose implantation into Si(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1629-1634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanisms for formation of continuous CoSi2 layers by high dose (∼1017 cm−2) Co implantation into Si(100). For single dose implantations, a critical dose exists above which coalescence into a single layer occurs after a vacuum anneal at 1000 °C for 30 min, but below which disconnected, strongly {111} faceted precipitates form. Transmission electron microscopy and Rutherford backscattering suggest that the key condition for continuous layer coalescence to occur is the formation of a connected array of small silicide precipitates either as-implanted or during an intermediate 600 °C anneal. This postulate is supported by the observation that super-critical doses which are builtup by successive subcritical doses and 1000 °C anneals do not coalesce into single layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346643
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  • 2
    Electronic Resource
    Electronic Resource
    Development of a portable time-of-flight membrane inlet mass spectrometer for environmental analysis (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 565-571 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The benefits of on-site analysis of environmental pollutants are well known, with such techniques increasing sample throughput and reducing the overall cost of pollution level monitoring. This article describes a transportable time-of-flight (TOF) mass spectrometer, based upon a converging, annular TOF (CAT) arrangement. The instrument, the transportable CAT or T-CAT is battery powered and self-contained. The vacuum chamber is never vented and is kept at a very low pressure, even during analysis. Sample gases are admitted to the mass spectrometer via a membrane inlet system. Data collection and analysis are accomplished via a portable PC. The T-CAT is capable of detection limits approaching those of more conventional, nonportable design. The device shows reasonable linearity over wide concentration ranges. Initial results indicate that the T-CAT will be capable of use in a wide range of applications, particularly for environmental monitoring. This article describes the features of the T-CAT, and presents initial results from the membrane inlet/T-CAT system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148695
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  • 3
    Electronic Resource
    Electronic Resource
    Pressure–temperature–time evolution of the Central East Greenland Caledonides: quantitative constraints on crustal thickening and synorogenic extension (2003)
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 21 (2003), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Whereas geologists have known for three-quarters of a century that there was significant crustal thickening in the central East Greenland Caledonides, the crucial role of extensional faulting during Caledonian orogenesis has only been recognized during the past decade. In this paper, new petrographic and thermobarometric observations are presented from migmatitic metasedimentary gneisses of the Forsblad Fjord region (c. 72.5°N). Samples of the Krummedal Sequence, collected from the footwall of the upper of two significant splays of the main extensional fault system in the region—the Fjord Region Detachment (FRD)—enable us to establish a relative sequence of metamorphism. Our pressure (P)–temperature (T) results imply a clockwise loop in P–T space. As recorded by mineral assemblages in the Krummedal gneisses, prograde metamorphism involved a net increase of c. 4 kbar and 250 °C, with peak conditions of c. 10.5 kbar at 785 °C. Early burial and heating was followed by near-isothermal decompression of 4.5 kbar, a process which is attributed to roughly 18 km of tectonostratigraphic throw on the upper splay of the FRD. Combining data reported here with the published data, it is estimated that the approximate tectonostratigraphic throw along the lower splay of the FRD was c. 16 km. In situ U–Th–Pb-monazite electron microprobe dating suggests that the earliest phase of metamorphism recorded in the Krummedal Sequence gneisses of Forsblad Fjord occurred during the Caledonian orogeny. Furthermore, the combination of our new data with existing conventional TIMS U-Pb and 40Ar/39Ar data imply that: (1) movement along the uppermost splay of the FRD (c. 425–423 Ma) occurred at maximum time-averaged slip-rates equivalent to c. 9 mm of vertical displacement per year; and (2) that the final stages of metamorphism occurred prior to c. 411 Ma, although part of this denudation was likely accommodated on overlying extensional structures that may have been active more recently. There is close agreement between our data and results from the Krummedal Sequence north of the field area (72.5°−74°N), and rocks of the Smallefjord Sequence (75°−76°N) that are suggested to correlate with the Krummedal Sequence. This leads us to infer that the events recorded in the Forsblad Fjord region are of orogen-scale significance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.2003.00489.x
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  • 4
    Electronic Resource
    Electronic Resource
    Crystal structure of 4-cyanopyridinemercury(I) perchlorate (1972)
    s.l. : American Chemical Society
    Inorganic chemistry 11 (1972), S. 1639-1643 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50113a037
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  • 5
    Electronic Resource
    Electronic Resource
    DIELECTRIC POLARIZATION IN SOLIDS (1933)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 55 (1933), S. 2171-2172 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01332a508
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  • 6
    Electronic Resource
    Electronic Resource
    The System Ferrous Sulfate—Manganous Sulfate—Water at 0 and 25° (1933)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 55 (1933), S. 3182-3185 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01335a019
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  • 7
    Electronic Resource
    Electronic Resource
    Transport in extrinsic photoconductors: A comprehensive model for transient response (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1510-1514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well established experimentally that the transient response of extrinsic photoconductors often consists of multiple components, with a slow component whose characteristic time can far exceed either the free carrier lifetime or dielectric relaxation time. However, various models that developed over a period of 30 years have failed to adequately explain the experimental results. We present a comprehensive model for the transient response to changes in photoexcitation of a low temperature extrinsic semiconductor of finite length. The model includes both drift and diffusion effects and, in contrast to earlier work, can be applied through a range of low to high fields, where both carrier diffusion and/or field-dependent sweep-out may occur. Changes in carrier concentration and electric field are calculated for a common operating regime where sweep-out is dominant and displayed in three-dimensional plots illustrating spatial and temporal variations. The slow transient response depends on generation rate, electric field and intercontact length but is independent of mobility and lifetime. Analytical models are presented for the limits where either carrier diffusion or carrier sweep-out is clearly dominant. The results offer insight into the role of contacts and space charge for transport in insulators and low temperature semiconductors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363021
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  • 8
    Electronic Resource
    Electronic Resource
    An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow-gap semiconductors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 802-813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical calculations of Auger transition rates are complicated by the interconnection of energy and momentum conservation. The use of a flat valence band where the heavy holes have infinite mass decouples energy and momentum conservation and greatly simplifies the calculation. This flat valence band model has been used to obtain a simple analytic approximation for Auger transition rates. It requires just two parameters to cover a wide range of temperature and carrier Fermi levels (both degenerate and nondegenerate) and their values may be found either by comparison with an accurate calculation or from Auger lifetimes determined experimentally. The results have been applied to InSb and Cd0.2188Hg0.7812Te where good agreement with accurate theoretical values using realistic band structures has been attained. The same model has also been used to provide a simple analytic approximation for impact ionization probability rates, again agreeing well with accurately determined values. Such approximations will prove to be useful in modeling semiconductor transport effects and devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360828
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of the hydration-dependent conformation of the (dG)20.cntdot.(dG)20(dC)20 oligonucleotide triplex using FTIR spectroscopy (1995)
    s.l. : American Chemical Society
    Biochemistry 34 (1995), S. 1137-1142 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00004a006
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  • 10
    Electronic Resource
    Electronic Resource
    Electron field emission from ion-implanted diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1157-1159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 1014–1015/cm2. This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm2 can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-implanted samples were annealed at high temperatures in order to anneal out the implantation-induced defects, the low-field electron emission capability of diamond disappeared. These results further confirm our earlier findings about the role of defects in the electron emission from undoped or p-type doped diamond and indicate that the improved emission characteristics of as-implanted diamond is due to the defects created by the ion implantation process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114993
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