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  • 1
    Electronic Resource
    Electronic Resource
    Oxidation Kinetics and Composite Scale Formation in the System Mo(Al,Si)2 (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The oxidation kinetics of hot-pressed Mo(Al0.01Si0.99)2 and Mo(Al0.1Si0.9)2 were measured at 480°C, and between 1200° and 1600°C. The qualitative oxidation of arc-melted Mo(Al0.1Si0.9)2, Mo(Al0.3Si0.7)2, Mo(Al0.5Si0.5)2, and Mo3Al8 was examined after 600°C for 1000 h in air. At all temperatures, the compositional difference between the materials yielded very different oxidation rates and scale microstructures. At 1400° and 1500°C, microstructural evolution of the oxide scales resulted in improved oxidation resistance at long times (〉400 h). At these temperatures, a significant reduction in the long-time oxidation kinetics was correlated with the in situ formation of an inner mullite scale. At 480° and 600°C, oxidation resistance improved significantly with increasing aluminum concentration. Contrary to the behavior of MoSi2, samples of Mo(Al0.01Si0.99)2 did not demonstrate catastrophic oxidation, and samples of Mo(Al0.1Si0.9)2 were very oxidation resistant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00109.x
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  • 2
    Electronic Resource
    Electronic Resource
    The Free Energy of Formation of Niobium Dioxide between 1100 and 1700°K.1 (1964)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 68 (1964), S. 952-953 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100786a503
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  • 3
    Electronic Resource
    Electronic Resource
    Estimation of the Entropy of Formation at 298°K. for Some Refractory Metal Carbides1 (1964)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 68 (1964), S. 954-955 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100786a504
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  • 4
    Electronic Resource
    Electronic Resource
    The Free Energies of Formation of the Vanadium, Niobium, and Tantalum Carbides1 (1964)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 68 (1964), S. 860-866 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100786a027
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen Transport in Silica at High Temperatures: Implications of Oxidation Kinetics (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The apparent change in activation energy describing the parabolic rate constant for the passive oxidation of SiC is examined. New data are combined with reevaluated previous results to determine the influences of crystallinity, impurity contamination, and multiple flux mechanisms. The results suggest that the high-temperature transition from interstitial-dominant to network-dominant oxygen transport is a property of amorphous SiO2 scales and does not exist for cristobalite. Highly crystalline scales do not show this transition. Agreement among various studies also suggests that, for high-purity SiO2 scales, there is no difference between the rates of interstitial oxygen transport in amorphous SiO2 and in β-cristobalite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb01061.x
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and High-Temperature Phase Stability of Mo(Al,Si)2—MoSi2 Intermetallics (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A two-step processing technique was used to make dense, homogeneous intermetallics in the Mo(Al,Si)2—MoSi2 system. A variation of self-propagating high-temperature synthesis was used, in which starting pellets were nucleated at room temperature to make intermetallic powders from metallic precursors, followed by uniaxial hot pressing at 1600°—1800°C to achieve densification. The samples were held at the hot-pressing temperatures for several hours; therefore, this study also provided qualitative phase-stability information. The solubility limit of Al for Si in MoSi2 was 〈5% at 1800°C. Samples that had 10% Al substituted for Si yielded approximately equal amounts of MoSi2 and Mo(Al,Si)2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01300.x
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  • 7
    Electronic Resource
    Electronic Resource
    The Oxidation of iridium-aluminum and iridium-hafnium intermetallics at temperatures above 1550°C (1989)
    Springer
    Oxidation of metals 32 (1989), S. 357-369 
    Details
    ISSN: 1573-4889
    Keywords: Oxidation ; iridium ; aluminum ; hafnium ; intermetallics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of iridium-aluminum and iridium-hafnium intermetallics has been investigated in various oxygen pressures and at temperatutes between 1550 and 1800°C. The hafnium concentration necessary for the formation of a continuous external HfO2 scale is above 50 at.% hafnium. The aluminum concentration necessary for the formation of a continuous external Al2O3 scale is above 55 at. % aluminum, which is the aluminum-rich boundary of the IrAl intermetallic. Thus, it appears that the IrAl25 intermetallic necessary for the formation of a protective, external Al2O3 scale in the iridiumaluminum system. The activation energy for the growth of Al2O3 on iridiuim (60 at.%) aluminum intermetallic is in agreement with that determined pre viously for the NiAl intermetallic at lower temperatures. This suggests that similar process may control the Al2O3 scale growth on these two intermetallics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665443
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature oxidation behavior of iridium-based alumina-forming ternary intermetallics (1994)
    Springer
    Oxidation of metals 41 (1994), S. 37-63 
    Details
    ISSN: 1573-4889
    Keywords: iridium-aluminum-silicon alloys ; intermetallic ; oxidation resistance ; alumina ; silica
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of iridium-based intermetallics in the ternary iridium-aluminum-silicon system has been investigated. Additions of up to 20 at. % silicon to iridium-aluminum binary alloys reduce the aluminum concentration necessary for the formation of a protective alumina scale from greater than 55 at.% in the absence of silicon to as low as 20 at.% when 20 at.% silicon is present. Ternary iridium-aluminum-silicon alloys with 30–50 at.% aluminum and 8–10 at.% silicon exhibit parabolic oxidation behavior, and the rate constants are in good agreement with those previously determined for binary iridium-aluminum alloys. The oxidation rate of ternary iridium-aluminum-silicon alloys with 10 at.% silicon and 30–40 at.% aluminum deviates from the parabolic-oxidation behavior for alumina scale growth in the later oxidation stage, presumably due to the formation of a silica inner layer. Thermal cycling of the Ir-50 Al-8Si and Ir-60-Al samples does not result in scale spallation due to the coefficient of thermal expansion match between the alumina scale and intermetallic substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01196642
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