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  • 1
    Electronic Resource
    Electronic Resource
    Two different micromodels of zinc oxide varistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5982-5986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micromorphology of ZnO varistors made with seed grains shows that there are two kinds of combinations of ZnO grains. Two different micromodels of ZnO varistors are put forward according to their micromorphology. The relation between ZnO grains' mean diameter and the amount of seed grains has been deduced from the micromodels. The relation between the electric field E1mA/cm2, nonlinear coefficient, and breakdown energy density of ZnO varistors and the amount of ZnO seed grains has been explained by means of micromodels. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359181
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  • 2
    Electronic Resource
    Electronic Resource
    Intrinsic broadening of the modulation-related reflections in a high-quality Bi2Sr2CaCu2Oy crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4232-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity distribution of the satellites from the incommensurate modulation 0.21b*+c* and the additional modulation-related reflections, described by 0.21b* and incompatible with the generally accepted Bbmb symmetry, have been studied in exactly the b*c* plane by means of x-ray diffraction for a high-quality Bi2Sr2CaCu2Oy crystal. The mosaic spread of this crystal, with only a single large domain, is as small as 0.15°. Broadening solely along the c* direction of the satellites, especially the additional modulation-related reflections, was clearly observed and further confirmed by a monochromatized x-ray Laue photograph, which should be intrinsic to the superstructure in bulk Bi2Sr2CaCu2Oy crystals. Apart from the broadening relative to the Bragg reflections, for the first time a weak diffuse feature fundamental to the satellites was also clearly detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361791
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of annealing on the structure and diamagnetic transition width of high-quality crystal Bi2Sr2CaCu2Oy studied by x-ray-diffraction and ac susceptibility measurements (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4236-4241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large and highly oriented Bi2Sr2CaCu2Oy crystal with only a single domain was progressively air annealed at 500 and 750 °C for 4 and 8 h. Measurements of ac susceptibility showed that Tc (onset) and ΔTc (10%–90% of the complete transition) of the crystal were 74 and 3 K (as grown), 85 and 0.6 K (annealed at 500 °C for 4 h), and 89 and 2.5 K (annealed at 750 °C for 8 h), respectively. To explain this typical change of ΔTc with annealing temperature, a full structural characterization by x-ray diffraction in the b*c* plane and by Laue photographs of the crystal as grown and after each annealing treatment was carried out. Apart from variations of the lattice parameters, it is noted that the smaller the ΔTc, the more highly oriented and structurally homogeneous the crystal. We explain the annealing effect on ΔTc by variations in crystallinity, structural homogeneity, and surface phase decomposition, and the changes in oxygen stoichiometry caused by the annealing process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361792
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen loss effect under both reducing and oxidizing thermal treatments on superconductivity of single-crystal Bi2Sr2CaCu2O8+y (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 595-597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After annealing at 450–550 °C, in either flowing nitrogen or flowing oxygen atmosphere, the Bi2Sr2CaCu2O8+y single crystals with as-grown superconducting transition temperature Tc of 65–83 K all showed at Tc of ∼86 K with a transition width of 0.5–1 K. For the crystals annealed at 500 °C and in increasing oxygen pressure, however, the improvement of superconductivity was depressed. These results can be explained by oxygen loss under both reducing and oxidizing thermal treatments of the oxygen-doped Bi2Sr2CaCu2O8+y samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357050
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3 heterostructures for fabrication of ferroelectric field-effect transistor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2068-2071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial La0.35Nd0.35Sr0.3MnO3 (LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3 (001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2 and a coercive field of 30–40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010 bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305859
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial and highly electrical conductive La0.5Sr0.5TiO3 films grown by pulsed laser deposition in vacuum (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 700-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The target material with nominal composition of La0.5Sr0.5TiO3 sintered in air is an insulator and not a single-phase compound. By pulsed laser ablation in vacuum at the multiphase La–Sr–Ti–O target, however, highly electrical conductive and epitaxial La0.5Sr0.5TiO3 films have been fabricated on LaAlO3(001) substrates. Structural characterization using three-axis x-ray diffraction (θ–2θ scan, ω-scan rocking curve, and φ scan) reveals that the films have a pseudocubic structure and grow on the substrates with a parallel epitaxial relationship. Atomic force microscopy images show the films have quite smooth surface, for a film 200 nm thick, the roughness Ra is about 0.31 nm over the 1 μm×1 μm area. Resistivity versus temperature measurements indicate that the films are metallic at 2–300 K and have resistivity of 64 μΩ cm at 300 K, which is about one order lower than that of the single-phase La0.5Sr0.5TiO3 bulk materials. After the same deposition procedure, epitaxial La0.5Sr0.5TiO3 films have also been grown on TiN buffered (001) Si substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373724
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of annealing in reduced oxygen pressure on the electrical transport properties of epitaxial thin film and bulk (La1−xNdx)0.7Sr0.3MnO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3006-3010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the effect of annealing in reduced oxygen pressure on the electrical transport properties of (La1−xNdx)0.7Sr0.3MnO3 (x=0, 0.25, 0.5, 0.75, and 1) epitaxial thin films and bulk materials has been carried out. The epitaxial films grown by pulsed laser ablation were in situ annealed in an oxygen atmosphere of 2×10−6–760 Torr at 700 °C for 1 h. It is found that the electrical transport behavior of the epitaxial film is insensitive to the annealing pressure. A similar thermal treatment on the bulk materials at 5 mTorr oxygen ambient, however, caused a dramatic change in their resistivity-temperature dependence. Our results suggest that the annealing has a prominent effect on the properties of grain boundary, which plays an important role in determining the electrical transport behavior of polycrystalline manganites. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372291
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  • 8
    Electronic Resource
    Electronic Resource
    Phase decomposition and superconductivity in Bi2Sr2CaCu2Oy single crystals (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7388-7392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase decomposition in high quality Bi2Sr2CaCu2Oy(2212) single crystals annealed in air at 400–750 °C is studied by x-ray diffraction and scanning electron microscopy. It is found that the Bi2Sr2CaCu2Oy phase of the as-grown single crystals readily decomposes even at temperatures as low as 450 °C. With the annealing temperature increasing, phases of bismuth oxides, strontium bismuth oxide, and the Bi2Sr2CuOx(2201) are segregated successively from the air annealed single crystals and are found to be temperature dependent. Combining with the enhancement of the superconducting onset temperatures and the very narrowness of the diamagnetic transitions observed for the annealed crystals, it is suggested that the structural change indicated by the surface phase decomposition may play an important role in the variations of superconductivity in Bi2Sr2CaCu2Oy single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355007
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  • 9
    Electronic Resource
    Electronic Resource
    Surface phase decomposition in Bi2Sr2CaCu2Oy single crystals (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4262-4264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase decomposition in high-quality Bi2Sr2CaCu2Oy single crystals has been induced by annealing treatments at a temperature over 500 °C. X-ray diffraction and scanning electron microscope studies show that this change of structure is mainly limited in the surface part of the annealed single crystals and the 2201 phase together with a new phase of cell parameter c=9.6 A(ring) segregated from the 2212 phase. The phase decomposition is directly associated with the oxygen content in the annealing atmospheres and evaporation of the Bi is detected and is suggested to be the main factor involving the phase segregation in the annealing process and an important factor for the BiO bilayers in the as-grown single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354408
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  • 10
    Electronic Resource
    Electronic Resource
    Top-interface-controlled fatigue of epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric thin films on La0.7Sr0.3MnO3 electrodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3441-3443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3(PZT/LSMO) and LSMO/PZT/LSMO heterostructures have been grown on LaAlO3(001) substrates by pulsed-laser deposition. Three types of ferroelectric capacitors, i.e., Pt/PZT/LSMO (A), LSMO/PZT/LSMO (B), and Pt/PZT/LSMO (C) have been fabricated, where the Pt electrode was sputter deposited onto as-grown (capacitor A) and in situ annealed (capacitor C) PZT/LSMO films, respectively. It is found that the LSMO/PZT/LSMO capacitor shows a low coercive field and good fatigue endurance up to 1010 switching cycles. Similar properties are also obtained for capacitor A. However, the capacitor C, with the PZT film in situ annealed at reduced oxygen pressures, exhibits higher switching voltages and starts to fatigue rapidly at about 106 bipolar switching cycles. Lead deficiency at the surface of the annealed PZT films has been observed. Our results demonstrate that the fatigue performance of PZT/LSMO films, although affected greatly by the electrode configurations, is intrinsically determined by the interface property at the top electrode. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327279
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