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Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)

Jiang, W. H. ; Ye, X. L. ; Xu, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 2529-2532

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1288231

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Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure (2002)

Xu, H. Z. ; Shi, Z.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 81 (2002), S. 691-693

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Strong spin- and wave-vector dependent upon electron resonant tunneling through antisymmetrical double-barrier magnetic structures are revealed. The electron transmission probability and the polarization of transmitted beams as a function of incident electron energy for different structures have been calculated. It is shown that the antisymmetric magnetic structure possesses the strongest spin polarization and well-pronounced wave-vector filtering properties. Surprisingly, a polarization of nearly 100% can be achieved by spin-dependent resonant tunneling in these structures, although the average magnetic field of the structures is zero. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1495541

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Does a magnetic barrier or a magnetic-electric barrier structure possess any spin polarization and spin filtering under zero bias? (2001)

Xu, H. Z. ; Okada, Y.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 3119-3121

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: In this letter, we have clarified that there is no spin polarization and spin filtering in a magnetic barrier structure as well as in a magnetic–electric barrier structure using our explicit expressions for electron transmission probability. Our results are found to be contradictory to those of A. Majumdar [Phys. Rev. B 54, 11911 (1996)] and G. Papp and F. M. Peeters [Appl. Phys. Lett. 78, 2184 (2001)]. We have shown the significant spin polarization and spin filtering observed by these authors were caused by a mistake in their transmission probability. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1416167

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