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  • 1
    Electronic Resource
    Electronic Resource
    Correlations of solvent-exchange activation enthalpies (1978)
    s.l. : American Chemical Society
    Inorganic chemistry 17 (1978), S. 1810-1813 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50185a022
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2469-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341655
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  • 3
    Electronic Resource
    Electronic Resource
    Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5351-5356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp−1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412836
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  • 4
    Electronic Resource
    Electronic Resource
    Control of the Schottky barrier using an ultrathin interface metal layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 268-270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal-semiconductor interfaces and could be useful in device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100986
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  • 5
    Electronic Resource
    Electronic Resource
    High gain and wide dynamic range punchthrough heterojunction phototransistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6978-6981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we propose and demonstrate a novel punchthrough heterojunction phototransistor (HPT). The base of the transistor is lightly doped and completely depleted under the operating condition. The collector bias current can be applied without the base terminal. The transistors exhibit optical conversion gain as high as 1240 at an incident optical power as low as 0.5 μW, and the gain changes less than 15% over a 20 dB range of incident optical power. The transient measurements showed that the transistor has a high response speed than that of conventional two or three terminal HPTs. This represents the best performance of HPTs with similar dimensions. The results of simulation showed that the punchthrough HPTs have much lower noise characteristics than conventional HPTs. The principle reported here can be applied to HPTs made from other material systems, such as AlGaSb/GaSb and InP/InGaAs, for long wavelength optical communications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355048
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier confinement photoconductive detector (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1323-1325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99148
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  • 7
    Electronic Resource
    Electronic Resource
    Al/Au and Cu/Au bilayer-metal contacts to YBa2Cu3O7−x thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350834
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  • 8
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘Negative capacitance at metal-semiconductor interfaces' '' [J. Appl. Phys. 70, 1090 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1089-1089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority-carrier effect cannot account for the experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349678
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  • 9
    Electronic Resource
    Electronic Resource
    Structural study of tin and carbon coimplanted silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347410
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  • 10
    Electronic Resource
    Electronic Resource
    Negative capacitance at metal-semiconductor interfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2845-2848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley–Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346442
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