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  • 1
    Electronic Resource
    Electronic Resource
    Effects of nitrogen on oxygen precipitation in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3760-3765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect interactions among oxygen, carbon, and nitrogen during a three-step high-low-high intrinsic gettering process (1100 °C+750 °C+1000 °C) were studied using differential analysis of Fourier transform infrared (FTIR) absorption spectra of Czochralski-Si crystals intentionally doped with carbon and nitrogen. Two phenomena related to nitrogen were observed: (1) Nitrogen-enhanced oxide nucleation in the temperature range from 750 to 1100 °C, thus having a negative effect on the denuding step; and (2) defect interaction associated with carbon during oxygen precipitation was significantly affected by the co-existence of nitrogen. For the latter effect the first-step annealing at 1100 °C was crucial. The results presented are consistently interpreted assuming that nitrogen participates in creation of nucleation sites for heterogeneous oxygen precipitation, and also assuming that nitrogen aggregates at the strain regions surrounding precipitates and thus retards Si self-interstitial migration. This explanation was supported by observed differences in oxygen-precipitate-related FTIR absorption and by the behavior of stress-related photoluminescence D lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350886
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of carbon on oxygen precipitation in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4313-4319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic Fourier-transformed infrared-spectroscopy study of oxygen and carbon in isolated form and as complexes in the silicon lattice has revealed a direct correlation between the decrease of substitutional carbon concentration and the decrease of interstitial oxygen concentration during 750 °C annealing. At a concentration exceeding 2 ppma, carbon was also found to enhance oxide precipitate growth. After completing a three-step annealing (1100 °C+750 °C+1000 °C), an oxide-precipitate-related IR-absorption band was observed. The changes of the IR-absorption band were correlated with annealing-induced changes in the state of carbon. A direct incorporation of carbon into oxide precipitates, and/or carbon interaction with silicon self-interstitials generated during oxygen precipitation, are suggested to have an effect on reducing lattice strain associated with the oxygen-precipitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344947
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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