ISSN:
0001-1541
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Process Engineering, Biotechnology, Nutrition Technology
Notes:
Mathematical models are developed to examine two alternative means of boron doping from boron-rich glass films. For the planar source diffusion system, in which boron diffusion and glass film growth occur simultaneously at high temperature (900-1,200°C), glass film growth rates and the degree of doping achieved are predicted. In most cases, the solubility limit of boron in silicon is attained at the silicon surface. It is found that depletion of the boron source wafers used in this process may be slowed considerably by their removal from the reactor after a short time. Model predictions for an alternative method, in which the glass film is pregrown at low temperature (300°C) and the diffusion subsequently performed at high temperature, demonstrate a strong dependence of the boron surface concentration on the initial boron content in the pregrown glass film, for concentrations of boron near the solubility limit. The conditions for which a masking film of SiO2 is insufficient to prevent boron diffusion into silicon, known as mask failure, are also predicted by the models.
Additional Material:
12 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/aic.690340907
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