ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The impact of nickel on minority carrier recombination lifetime has been studied in ptypeCZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitatescan be used to improve drastically the detection limit of nickel. This is explained by the decorationof oxide precipitates by nickel, which results in the enhanced recombination activity. In the absenceof oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafersurfaces, which does not have such a high impact on the measured recombination lifetime, at leaston a low concentration level. Low temperature anneal at 180ºC or light illumination of the wafersafter nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, whichmay indicate that nickel precipitates efficiently during air-cooling from high temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.183.pdf
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