ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiCbuffer layers has been investigated. From XRD analysis, the difference in the crystal orientationbetween GaN(10-12) and 3C-SiC(001) has been found to be around 8˚ toward the [110] direction ofthe 3C-SiC templates. From TEM observations, a cubic-phase AlN seed layer is found to grow on3C-SiC(001) templates, and the swift transition from the cubic phase to a hexagonal phase leads to thestable growth of hexagonal nitrides. Using 8˚-offcut Si substrates, it is possible to obtain a mirror-likesurface of GaN(10-12) using an approximately 10-nm-thick AlN seed layer, which swiftly transitionsfrom cubic AlN to hexagonal GaN
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1281.pdf
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