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Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon (1985)

Horiguchi, Seiji ; Yoshino, Hideo

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 1597-1600

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Interface potential barrier heights for ultrathin silicon oxides (15– 44 A(ring)) on silicon and effective electron masses in some of these oxides are evaluated. Evaluation is performed using a new technique of analyzing the charging characteristics of metal-nitride-oxide-semiconductor capacitors. Oxides thicker than 36 A(ring) have the same potential barrier heights as those for thick oxides, assuming the effective electron mass of the oxides is the same. However, for oxides thinner than 31 A(ring), the potential barrier heights decrease and the effective electron masses increase as the oxide thickness decreases. These results suggest that oxides at least thicker than 36 A(ring) can be applied to metal-oxide-semiconductor field-effect transistors as gate oxides.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336046

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Electrical characteristics of silicon-nodule-related via failures observed in aluminum-silicon interconnects (2000)

Itsumi, Manabu ; Ohfuji, Shin-ichi ; Akiya, Hideo ; [et al.]

Springer

Journal of solid state electrochemistry 4 (2000), S. 125-130

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ISSN: 1433-0768

Keywords: Key words Via failures ; Silicon nodules ; Aluminum interconnects

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Abstract We have evaluated the electrical characteristics of silicon-nodule-related via failures in the aluminum interconnects of silicon integrated circuits. Current-voltage measurements indicated that the conduction mechanism follows Ohm's law. The resistance was 1.5–3 kΩ for a silicon nodule at a via of 1.0 μm × 1.0 μm. When the applied voltage was 3–6 V, the resistance decreased abruptly. This transition (abrupt decrease in resistance) was irreversible. We think that the resistance of 1.5–3 kΩ and the transition voltage of 3–6 V are two factors characterizing the silicon nodule. We can explain these values by assuming that aluminum in the silicon nodules at a solubility limit concentration acts as an acceptor.