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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen Ion-Implantation Induced Gettering Effects in Polycrystalline Silicon (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 491-496 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.491.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1533-1536 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with thequantitative mobility spectrum analysis (QMSA) technique. The nominally-undopedAl0.15Ga0.85N/GaN sample was grown by metal-organic vapor phase epitaxy. Variable-magneticfieldHall measurements were carried out in the temperature range of 4-160 K and magnetic fieldrange of 0-6.6 T. QMSA was applied to the experimental variable-field data to extract theconcentrations and mobilities associated with the high-mobility 2DEG and the relatively lowmobilitybulk electrons for the temperature range investigated. For temperatures below 100 K thecalculated mobility and carrier density values were close to the experimental results. No bulkconduction was observed in this temperature range. At 160 K, QMSA results show that parallelconduction in 3 mm thick GaN layer started to affect the average electron mobility
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1533.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    GaN Resistive Gas Sensors for Hydrogen Detection (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1553-1556 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report on the fabrication and testing of GaN resistive gas sensors for hydrogendetection. The Si-doped n-type GaN was grown by organometallic vapor phase epitaxy (OMVPE)on c-plane sapphire substrates. The device structure is simply a pair of metal ohmic contact pads.The sensors are sensitive to H2 gas over a wide range of concentration: the lowest concentrationtested being ~0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of thesignal is observed up to 100% H2 flow. In the continuous operation mode with varying H2concentration, a clear and sharp response was recorded with no memory effects during ramping upand down cycles of H2 concentration. The change in current at a fixed voltage to hydrogen wasfound to change with sensor geometry. The possible gas sensing mechanisms are still underinvestigation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1553.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1505-1508 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Improved structural quality and radiative efficiency were observed in GaN thin filmsgrown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous networktemplates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sampleis slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). Thelinewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with theuse of SiN and TiN layers, indicating the reduction in threading dislocation density. However, nodirect correlation is yet found between the decay times and the XRD linewidths, suggesting thatpoint defect and impurity related nonradiative centers are the main parameters affecting the lifetime
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1505.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Intraperitoneal penetration of pefloxacin in patients on continuous ambulatory peritoneal dialysis (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Nephrology 3 (1997), S. 0 
    Details
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary: Six patients with continuous ambulatory peritoneal dialysis (CAPD) associated peritonitis were treated with oral pefloxacin 400 mg twice a day. the concentration of pefloxacin was assayed in 20 sets of serum and peritoneal dialysate samples taken from these patients. With a mean starting serum level of 7.6 mg/L, pefloxacin was detected in all peritoneal dialysates within 15 min and attained a mean concentration of 4.2 mg/L within 2 h. the percentage penetration of pefloxacin into peritoneal fluid was 72.9% (SD 19.4%). the results showed that the administration of oral pefloxacin 400 mg b.d. could result in peritoneal drug levels that should be adequate for the treatment of peritonitis caused by common pathogens like Enterobacteriaceae species and Staphylococcus aureus. However, it may be necessary to give the drug parenterally on the first day of treatment before steady-state plasma concentrations are achieved and, in empirical therapy, combination antibiotics may be required when infection by more resistant pathogens is suspected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1797.1997.tb00225.x
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  • 6
    Electronic Resource
    Electronic Resource
    Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4145-4147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular beam epitaxy were investigated by atomic force microscopy, hot wet chemical etching, and reflection high-energy electron diffraction. We found that the GaN films grown on high temperature AlN (〉890 °C) and GaN (770–900 °C) buffer layers invariably show Ga and N polarity, respectively. However, the films grown using low temperature (∼500 °C) buffer layers, either GaN or AlN, could have either Ga or N polarity, depending on the growth rate of the buffer layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380399
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of inversion domains in GaN by electric-force microscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inversion domains in III-nitride semiconductors degrade the performance of devices fabricated in them. Consequently, it is imperative that we understand their electrostatic manifestation, the growth conditions under which such domains form, and an effective means of their identification. In what is nominally referred to as Ga-polarity samples, N-polarity domains have a polarization that is reversed with respect to the remainder of the surface, and therefore, have a different potential under strain. We have used surface-potential electric-force microscopy (SP-EFM) to image the electrostatic surface potential of GaN grown on sapphire, which is strained due to the thermal mismatch between the substrate and GaN. Employing a control sample with side-by-side Ga- and N-polarity regions, we have established the EFM mode necessary to identify inversion domains on GaN samples grown by molecular-beam epitaxy. This method is not sensitive to topology and has a spatial resolution of under 100 nm. The measured surface potentials for Ga-face and N-face regions are +25±10 and −30±10 mV, respectively, with respect to the sapphire substrate, where the sign is consistent with Ga- and N-polarity GaN under compressive strain due to thermal mismatch with the sapphire substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358359
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  • 8
    Electronic Resource
    Electronic Resource
    Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 216-218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaN films grown on buffer layers containing quantum dots by molecular beam epitaxy on sapphire substrates were investigated. The density of the dislocations in the films was determined by wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN quantum-dot layers in the buffer layer effectively reduces the density of the dislocations in the epitaxial layers. As compared to the dislocation density of ∼1010 cm−2 in the typical GaN films grown on AlN buffer layer, a density of ∼3×107 cm−2 was demonstrated in the GaN films grown with quantum dot layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432445
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3779-3781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) studies were performed on a 1.5-μm-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy. PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to excitonic transitions. We identified the main peaks in the PL spectrum. Taking advantage of the observation of donor bound exciton peaks and their associated two-electron satellites, we have determined the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421421
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  • 10
    Electronic Resource
    Electronic Resource
    Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3743-3745 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A free-standing 300-μm-thick GaN template grown by hydride vapor phase epitaxy has been characterized for its structural and optical properties using x-ray diffraction, defect delineation etch followed by imaging with atomic force microscopy, and variable temperature photoluminescence. The Ga face and the N face of the c-plane GaN exhibited a wide variation in terms of the defect density. The defect concentrations on Ga and N faces were about 5×105 cm−2 for the former and about 1×107 cm−2 for the latter. The full width at half maximum of the symmetric (0002) x-ray diffraction peak was 69 and 160 arc sec for the Ga and N faces, respectively. That for the asymmetric (10–14) peak was 103 and 140 arc sec for Ga and N faces, respectively. The donor bound exciton linewidth as measured on the Ga and N faces (after a chemical etching to remove the damage) is about 1 meV each at 10 K. Instead of the commonly observed yellow band, this sample displayed a green band, which is centered at about 2.44 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330563
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