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  • 1
    Electronic Resource
    Electronic Resource
    Methane Storage on Surface Modified Activated Carbons (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 135 (Feb. 2008), p. 73-76 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In this study, methane gas absorption ability of activated carbon (AC) with surfacefunctional group effect, was evaluated after nitric acid and urea treatment of AC surface. Specificsurface area and pore distribution of AC were studied through nitrogen absorption isotherm at 77 K.Micro pore volume was calculated through H-K method. Absorbed methane amount was evaluatedthrough volumetric method at room temperature by using auto absorption apparatus. Absorbedmethane amount of AC was found to increase with specific surface area increase. Correlationproposed between the methane absorption amount and surface nature indicates that the surfacenature plays an important role on the absorption amount at a given temperature
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.135.73.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    The deposition of SiOF film with low dielectric constant in a helicon plasma source (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1507-1509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiOF films deposited by a helicon wave plasma chemical vapor deposition method has been characterized using Fourier transform infrared spectroscopy and ellipsometry. High density plasma of (approximately-greater-than)1012 cm−3 can be obtained on a substrate at low pressure (〈10 mTorr) with rf power (approximately-greater-than)400 W with a helicon plasma source. A gas mixture of SiF4, O2, and Ar was used to deposit SiOF films on 5 in. Si(100) wafers not intentionally heated. Optical emission spectroscopy was used to study the relation between the relative densities of the radicals and the deposition mechanism. It was found that the addition of Ar gas to the SiF4/O2 mixture greatly increased the F concentration in the SiOF film. Discharge conditions such as gas composition, sheath potential, and the relative densities of the radicals affect the properties of the film. The dielectric constant of the SiOF film deposited using the helicon plasma source was 3.1, a value lower than that of the oxide film by other methods. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115681
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