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  • 1
    Electronic Resource
    Electronic Resource
    In-plane spin reorientation transitions in epitaxial Fe(110)/GaAs(110) films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7136-7138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe films in a thickness range from 4 to 64 monolayers (ML) were grown by molecular beam epitaxy on GaAs(110) at room temperature. The growth was characterized by reflection high energy electron diffraction. The magnetic in-plane anisotropy was investigated by alternating gradient magnetometry in a temperature range from 150 to 295 K. For a 64 ML thick Fe(110) film the [001] axis is the easy axis, the [−110] the intermediate axis, and the hard axis is between [−110] and [−111]. For Fe films with a thickness below 24.2±1.2 ML the [−110] becomes an easy axis at room temperature. A 24 ML Fe film shows a reorientation of the easy axis with decreasing temperature: Above the critical temperature of (251±3) K [−110] is the easy axis, for lower temperatures it becomes an intermediate axis. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354585
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetism of ultrathin FeCo (001) films on GaAs(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5457-5459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe34Co66 films in a thickness range from 3 to 100 monolayers (MLs) were grown by molecular beam epitaxy on GaAs(001) at room temperature. The growth was characterized by reflection high energy electron diffraction and x-ray diffraction. The magnetic properties were investigated by alternating gradient magnetometry magneto-optic Kerr effect, and superconducting quantum interference device magnetometry. The films show a strong interface-induced uniaxial in-plane anisotropy with the easy axis along [110]. In addition, the fourfold anisotropy coefficient changes sign around 6 ML i.e., the easy axis of the fourfold anisotropy switches from 〈110〉 to 〈100〉 with decreasing thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373371
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic moments and anisotropies in ultrathin epitaxial Fe films on ZnSe(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5923-5925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology, atomic magnetic moments, and in-plane magnetic anisotropies of ultrathin bcc Fe(001) films deposited by molecular beam epitaxy on ZnSe epilayers grown on GaAs(001) single crystal are reported. The growth mode and structure have been determined in situ by means of reflection high energy electron diffraction and Auger electron spectroscopy. The magnetic properties were characterized ex situ by an alternating gradient magnetometer, superconducting quantum interference device (SQUID) magnetometry, and conversion electron Mössbauer spectroscopy (CEMS). The Fe growth is epitaxial and occurs by three dimensional nucleation at the beginning. The coalescence of the islands is observed around 7 monolayers (ML). In agreement with SQUID results, CEMS measurements indicate no reduction of the Fe magnetic moment compared to the bulk value even for the first Fe monolayers. Determination of the in-plane anisotropy constants as function of the Fe thickness shows a strong interface-induced uniaxial in-plane magnetic anisotropy, which leads to a continuous evolution from a pure uniaxial anisotropy with easy axis along [110] direction for thickness below 10 ML to the pure bulk cubic Fe anisotropy above 40 ML. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372568
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial nanomagnets with intrinsic uniaxial in-plane magnetic anisotropy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7016-7018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial Fe films were grown on GaAs(001) by molecular beam epitaxy and magnetron sputtering. Two-dimensional arrays of circular dots with 200 nm diameter and 500 nm period were made by interferometric lithography and ion beam etching. Large area patterning (about 1 cm2) allows integral magnetic measurements with an alternating gradient magnetometer. The magnetic behavior of thick patterned films is dominated by the demagnetizing field. Ultrathin continuous films and dot arrays of these show a strong uniaxial in-plane magnetic anisotropy with the easy axis in [110] direction which is fully conserved during the patterning process. This means that two stable remanent single domain states exist in ultrathin Fe(001) sub-μm dots on GaAs(001) because (i) the magnetostatic energy is not important due to the small aspect ratio, and (ii) the Fe/GaAs(001) interface creates a strong uniaxial in-plane magnetic anisotropy. Nanomagnets with these properties seem very attractive for high density memory elements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372916
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    Paper (German National Licenses)
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